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SQJ126EP-T1_GE3-VB Product details
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You are designing a high-power DC-DC converter or automotive electronic module, facing current demands of up to 150A. Traditional MOSFETs often require multiple parallel units to meet the need, occupying PCB space and causing current sharing and heat dissipation issues. The VBsemi SQJ126EP-T1_GE3-VB is designed for this—it adopts the LFPAK56 (DPAK-compatible) package, leveraging advanced SGT (Split-Gate Trench) technology to integrate 40V withstand voltage, 150A continuous drain current, and an ultra-low on-resistance of only 0.7mΩ, making high-current power supply designs simpler, more efficient, and more reliable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Drain-source withstand voltage 40V, suitable for low-voltage, high-current power conversion scenarios
- Gate drive range ±20V, compatible with various PWM drive circuits
- Threshold voltage 3V, stable turn-on with standard logic levels
- On-resistance 0.7mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
- Maximum drain current 150A, single device handles high current, simplifying parallel design
- Package LFPAK56, excellent thermal path, suitable for high-density power boards
- Gate drive range ±20V, compatible with various PWM drive circuits
- Threshold voltage 3V, stable turn-on with standard logic levels
- On-resistance 0.7mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
- Maximum drain current 150A, single device handles high current, simplifying parallel design
- Package LFPAK56, excellent thermal path, suitable for high-density power boards
Domain and module applications：
- Motor Drive Module – Acts as a power switch, supporting high current output, reducing conduction losses, and improving driver efficiency and reliability.
- Automotive Electronic Systems – Suitable for high-current load switching such as headlight control, fuel pumps, and seat heating, withstanding 40V voltage fluctuations.
- Power Tools / Robotics – In high-load scenarios powered by lithium batteries, achieves low-resistance, high-current switching, extending tool runtime.
- Server / Telecom Power Supplies – Used in synchronous rectification or point-of-load (POL) power supplies, replacing multi-tube parallel solutions to save PCB area.
- Battery Protection Board / BMS – Provides a low-impedance path in the charge/discharge loop, reducing voltage drop and temperature rise, enhancing system safety.
- Low-Voltage High-Current DC-DC Converter – Utilizes the extremely low gate charge and on-resistance of SGT technology to improve conversion efficiency and reduce heatsink requirements. One-sentence summary: The SQJ126EP-T1_GE3-VB is not an ordinary MOS tube; it is the "efficiency core" and "space optimization master" for your high-current power design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
