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PSMN1R2-30YLC,115-VB Product details

Product introduction:

PSMN1R2-30YLC,115-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. Using advanced SGT technology, it achieves an excellent balance between ultra-low on-resistance and switching speed. The LFPAK56 package combines low thermal resistance with a compact footprint, suitable for high-current, high-density power designs. The combination of 40V withstand voltage, 150A continuous current, and 0.7mΩ on-resistance makes it an ideal power switching device for high-performance applications such as server power supplies, automotive point-of-load, and motor drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=40V: Suitable for 12V/24V/36V systems, provides ample voltage spike margin, effectively reducing avalanche breakdown risk.
VGS=±20V: Compatible with common logic level drives, flexibly adaptable to PWM controllers, gate driver ICs, and MCU outputs.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, while ensuring full conduction under high current conditions.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, minimal full-load conduction loss, significantly reducing cooling requirements and improving system efficiency.
ID=150A: Robust continuous current capability, meeting stringent load demands of high-power density converters and high-current switches.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency high-current switching, saves PCB area and optimizes thermal management.
Technology SGT: Shielded gate structure reduces Miller capacitance, lower switching losses, suitable for high-frequency hard-switching and soft-switching topologies.

Domain and module applications:


High-Current DC-DC Converters: Ultra-low on-resistance in synchronous rectification or step-down stages significantly improves heavy-load efficiency, facilitating module miniaturization.
Server and Communication Power Supplies: High current density and low thermal resistance meet stringent heat dissipation conditions, enhancing long-term system reliability.
Motor Drive and Control: Low switching losses and high surge capability suit inductive loads like power tools and fans, resulting in lower controller temperature rise.
Battery Protection and BMS: 150A current carrying capacity supports charge/discharge of large battery packs, with microsecond-level response protecting battery cell safety.
Automotive Auxiliary Power Supplies and Load Switches: 40V withstand voltage covers 12V/24V vehicle buses, and a wide temperature range adapts to engine compartment environments.
Power OR-ing Circuits: Extremely low forward voltage drop replaces Schottky diodes, reducing losses and improving the efficiency of power redundancy systems.
Power Tools and Garden Machinery: Low internal resistance enables greater output power, and a compact package facilitates internal layout of handheld devices.
Selection Summary: With its ultra-low on-resistance, strong current carrying capability, and SGT technology advantages, the PSMN1R2-30YLC,115-VB is a preferred power device for high-end, low-voltage, high-current switching applications, especially suitable for power systems with stringent thermal and electrical performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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