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PSMN1R1-30YLEX-VB Product details
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Struggling with low conversion efficiency and difficult temperature control in high-current, low-voltage applications? Let VBsemi PSMN1R1-30YLEX-VB help! This LFPAK56-packaged N-MOSFET, using advanced SGT technology, offers 40V withstand voltage, a massive 150A current capability, and an ultra-low on-resistance of 0.7mΩ (@10V), making it the "conduction king" for low-voltage, high-current scenarios. The ultra-low losses deliver excellent thermal performance, robustly supporting high-power-density power supply designs, making it an ideal choice for servers, automotive electronics, and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (Safer for high-current applications)
Drive Range: ±20V (Compatible with various gate drive voltages)
Threshold Voltage: 3V (Stable triggering with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 150A (Extremely high current density in a very small package)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for compact layouts)
Technology: SGT (Shielded Gate Trench,全面提升 switching speed and figure of merit)
Drive Range: ±20V (Compatible with various gate drive voltages)
Threshold Voltage: 3V (Stable triggering with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 150A (Extremely high current density in a very small package)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for compact layouts)
Technology: SGT (Shielded Gate Trench,全面提升 switching speed and figure of merit)
Domain and module applications：
– Six Core Scenarios, One Solution
High-Current DC-DC Conversion: Synchronous rectification, step-down modules, higher efficiency and lower heat generation
Motor Drive: Power tools, robot joints, stable and reliable high-current output
Automotive Power Systems: 40V vehicle bus, battery management, shock-resistant and high-temperature tolerant
Server Power Supplies: Core board power supply, point-of-load power, supporting high-density computing
Battery Protection and Switching: High-power battery pack charge/discharge management, safe and fast cut-off
Industrial Control and Energy Storage: Inverters, UPS bypass switches, high reliability and low loss
PSMN1R1-30YLEX-VB – Ultra-low resistance, high current, strong heat dissipation, making your low-voltage high-power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
