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PSMN1R1-25YLC,115-VB Product details
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PSMN1R1-25YLC,115-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. Its SGT process balances extremely low conduction losses with excellent switching speed, and the LFPAK56 package achieves an optimal trade-off between heat dissipation and board space. The combination of 40V withstand voltage, 150A current capability, and 0.7mΩ on-resistance makes it an ideal core power device for server power supplies, automotive electrical systems, and high-power-density converters, especially suited for applications with stringent efficiency and thermal management requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Suitable for 12V/24V/36V systems, provides ample voltage spike margin, enhances avalanche ruggedness, reduces system failure risk.
VGS=±20V: Compatible with 5V~12V drive levels, can directly connect to gate driver ICs or controllers, simplifying peripheral drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full conduction under standard gate voltage drive.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, minimal full-load loss, significantly reduces temperature rise, enabling smaller heatsinks or fanless designs.
ID=150A: Extremely ample continuous current capability, can handle peak and continuous current demands of high-power loads, suitable for high-current switching loops.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area compared to traditional DPAK/D2PAK, increases power density.
Technology SGT (Split-Gate Trench): Charge balance structure reduces gate charge, balancing low on-resistance with low switching losses, improving system efficiency.
VGS=±20V: Compatible with 5V~12V drive levels, can directly connect to gate driver ICs or controllers, simplifying peripheral drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full conduction under standard gate voltage drive.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, minimal full-load loss, significantly reduces temperature rise, enabling smaller heatsinks or fanless designs.
ID=150A: Extremely ample continuous current capability, can handle peak and continuous current demands of high-power loads, suitable for high-current switching loops.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area compared to traditional DPAK/D2PAK, increases power density.
Technology SGT (Split-Gate Trench): Charge balance structure reduces gate charge, balancing low on-resistance with low switching losses, improving system efficiency.
Domain and module applications：
Server/Communication Power Supplies: In rectification stages and power factor correction, extremely low conduction losses improve overall efficiency, meeting 80Plus Titanium energy efficiency requirements.
BLDC Motor Drive: 150A high current capability supports high-power motor controllers; low RDS(on) reduces heat generation; low PWM switching losses ensure smoother operation.
Automotive Electrical Systems: 40V withstand voltage covers 12V/24V vehicle buses, combined with AEC-Q101 reliability, suitable for main relays, electronic fuses, and power distribution modules.
Battery Protection and BMS: Milliohm-level internal resistance minimizes protection board self-consumption; low voltage drop on high-current charge/discharge paths, suitable for energy storage battery packs and power battery packs.
DC-DC Converters: In synchronous rectification low-side applications, replaces Schottky diodes, improving heavy-load efficiency by 3~5%, facilitating module miniaturization and high power density design.
Power Tools and Industrial Control: Withstands frequent start-up and locked-rotor current surges; high robustness extends overall equipment working life, reducing downtime due to failures.
Low-Voltage High-Current Switch Arrays: Suitable for power switching scenarios requiring low heat dissipation and fast turn-off, such as smart circuit breakers and solid-state relays.
Selection Summary: With its 0.7mΩ ultra-low on-resistance, 150A high current capability, and SGT technology advantages, the PSMN1R1-25YLC,115-VB provides ultimate efficiency and thermal performance in low-voltage high-power switching applications, making it an ideal choice for pursuing high power density, high reliability, and system cost optimization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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