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NVMJS1D7N04CTWG-VB Product details
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NVMJS1D7N04CTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. The SGT technology ensures ultra-low conduction losses and excellent switching characteristics, while the LFPAK56 package achieves an ideal balance between thermal performance and board space. The combination of 40V voltage rating, 150A current capability, and 0.7mΩ on-resistance makes it a preferred device for high current density power paths, battery switches, and motor drives, especially suitable for systems with stringent efficiency and thermal management requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Compatible with 12V/24V/36V systems, providing ample margin for switching spike voltage, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to controllers/drivers, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, while ensuring sufficient gate drive to enter the deep linear region.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, minimal full-load conduction losses, significantly reducing temperature rise and improving system efficiency.
ID=150A: Ample continuous current margin, meeting high-current load and transient surge requirements, suitable for parallel or single-tube high-power applications.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching and high-current routing, while saving PCB area and improving thermal paths.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to controllers/drivers, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, while ensuring sufficient gate drive to enter the deep linear region.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, minimal full-load conduction losses, significantly reducing temperature rise and improving system efficiency.
ID=150A: Ample continuous current margin, meeting high-current load and transient surge requirements, suitable for parallel or single-tube high-power applications.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching and high-current routing, while saving PCB area and improving thermal paths.
Domain and module applications：
High-power DC-DC converters: As synchronous rectification or main switch tubes, extremely low on-resistance reduces rectification losses, significantly improving heavy-load efficiency.
Battery protection and power path management: 150A high current capability combined with milliohm-level internal resistance reduces protection board self-heating, supporting high-rate charge/discharge.
Motor drive modules: Low PWM switching losses, strong current carrying capacity, suitable for power tools, drones, and vehicle motor controllers.
Vehicle low-voltage power supply network: 40V withstand voltage margin covers 12V/24V system transient overvoltage; LFPAK56 package suitable for compact vehicle modules.
Server/Communication power supplies: Under high power density requirements, ultra-low conduction voltage drop reduces thermal stress, improving the power level of the power module.
Power tools and energy storage equipment: High-current switches, low thermal resistance package, meeting reliable operation under high-load cycle conditions.
Load switches and electronic fuses: Milliohm-level resistance achieves low insertion loss; high current capability ensures robust system operation under abnormal conditions. Selection Summary: NVMJS1D7N04CTWG-VB achieves an optimized balance between ultra-low on-resistance, high current carrying capacity, voltage margin, and thermal performance. It is a high-performance core device for 40V low-voltage high-power switching applications, especially suitable for projects with extremely high requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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