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NVMJS1D2N04CLTWG-VB Product details
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Still troubled by conduction losses and heat issues in low-voltage, high-current scenarios? Let VBsemi NVMJS1D2N04CLTWG-VB break the deadlock! This LFPAK56 packaged N-MOSFET, leveraging advanced SGT (Shielded Gate Trench) technology, pushes the on-resistance down to an incredible 0.7mΩ (@10V) while supporting a massive 150A current carrying capacity—truly a 'superconductor' for low-voltage power paths. The 40V voltage rating combined with a ±20V wide drive range covers demanding applications in communications, automotive, and industrial power supplies, allowing high-current designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (Sufficient margin for low-voltage high-current scenarios)
Drive Range: ±20V (Compatible with various logic level drives)
Threshold Voltage: 3V (Stable threshold, strong anti-interference)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Minimal conduction losses)
High Current Capability: 150A (Performance beast in LFPAK56 package)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for high-density power designs)
Technology: SGT (Shielded Gate Trench, fast switching, low figure of merit)
Drive Range: ±20V (Compatible with various logic level drives)
Threshold Voltage: 3V (Stable threshold, strong anti-interference)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Minimal conduction losses)
High Current Capability: 150A (Performance beast in LFPAK56 package)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for high-density power designs)
Technology: SGT (Shielded Gate Trench, fast switching, low figure of merit)
Domain and module applications：
– Six High-Power Scenarios, One Chip Handles All
Power Tools: High-power brushless motor drive, strong burst power, lower temperature rise
Automotive Electronics: Vehicle DC-DC, battery management, vibration-resistant, shock-resistant
Server Power Supplies: Synchronous rectification and OR-ing circuits, achieving both efficiency and density
Energy Storage Systems: Lithium battery charge/discharge circuits, strong current carrying capacity, safe and reliable
Industrial Control: High-current solenoid valves, drivers, fast response, longer lifespan
High-Performance Computing: Core power supply modules, extremely low loss for low-voltage high-current transmission NVMJS1D2N04CLTWG-VB – The 'On-Resistance King' in the low-voltage high-power arena, maximizing your system's efficiency and power density!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
