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NVMJS0D9N04CTWG-VB Product details
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Struggling with conduction losses and heat dissipation in high-current power conversion? Let VBsemi NVMJS0D9N04CTWG-VB solve your worries! This LFPAK56 packaged N-MOSFET, using advanced SGT technology, pushes the on-resistance down to 0.7mΩ (@10V), truly a 'milliohm-level' current path. It supports a continuous current of 150A with a 40V voltage rating, easily handling low-voltage, high-power scenarios, delivering ultimate efficiency and reliability for power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (Covers low-voltage high-current applications, ample margin)
Drive Range: ±20V (Compatible with various gate drive levels, flexible adaptation)
Threshold Voltage: 3V (Effectively driven by standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 150A (Ultra-high current handling, suitable for high-power-density designs)
Package: LFPAK56 (Low inductance, strong heat dissipation, suitable for compact layouts)
Technology: SGT (Shielded Gate Trench, lower switching losses, superior figure of merit)
Drive Range: ±20V (Compatible with various gate drive levels, flexible adaptation)
Threshold Voltage: 3V (Effectively driven by standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 150A (Ultra-high current handling, suitable for high-power-density designs)
Package: LFPAK56 (Low inductance, strong heat dissipation, suitable for compact layouts)
Technology: SGT (Shielded Gate Trench, lower switching losses, superior figure of merit)
Domain and module applications：
– Six Hot Scenarios, One Solution
High-power DC-DC conversion: Server power supplies, communication power supplies, achieving both efficiency and density
Motor drives: Power tools, drone ESCs, stable and strong high-current output
Battery protection and BMS: Low-loss charge/discharge circuit, extending system runtime
Automotive electronics: Vehicle power supplies, lamp drivers, reliable shock resistance and high-temperature tolerance
Energy storage inverters: MPPT controllers, energy storage converters, enabling efficient green energy conversion
Industrial power supplies: High-frequency switching power supplies, power modules, making thermal design easier NVMJS0D9N04CTWG-VB – Ultra-high current, ultra-low resistance, injecting powerful momentum into high-power-density designs!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
