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NVMJS0D9N04CLTWG-VB Product details
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NVMJS0D9N04CLTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching applications. Using SGT technology, it combines ultra-low on-resistance with superior switching performance. The LFPAK56 package achieves an ideal balance between thermal resistance, parasitic parameters, and board space. The combination of 40V voltage rating, 150A current capability, and 0.7mΩ on-resistance makes it a preferred device for server power supplies, automotive electrical systems, and high power density DC-DC converters, especially suitable for replacing traditional DPAK or D2PAK packages, significantly improving system efficiency and integration.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Compatible with 5V/12V/24V/36V multi-level voltage systems, providing ample margin for inductive load spikes and switching transients, enhancing avalanche capability.
VGS=±20V: Compatible with 3.3V~12V logic levels, allowing direct connection to drivers, MCUs, or PMICs, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage, combined with SGT low gate charge characteristics, enables fast and stable switching transitions, effectively suppressing ringing.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, reducing conduction losses by an order of magnitude compared to traditional package devices, providing ultimate efficiency for 150A-class high-current scenarios.
ID=150A: Ample continuous current capability, meeting the needs of high-power nodes such as motor buses and battery main switches, with stronger peak current handling.
Package LFPAK56: Optional Kelvin source, low thermal resistance, low parasitic inductance, supports high-frequency high-current operation, while saving PCB area and improving thermal paths.
VGS=±20V: Compatible with 3.3V~12V logic levels, allowing direct connection to drivers, MCUs, or PMICs, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage, combined with SGT low gate charge characteristics, enables fast and stable switching transitions, effectively suppressing ringing.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, reducing conduction losses by an order of magnitude compared to traditional package devices, providing ultimate efficiency for 150A-class high-current scenarios.
ID=150A: Ample continuous current capability, meeting the needs of high-power nodes such as motor buses and battery main switches, with stronger peak current handling.
Package LFPAK56: Optional Kelvin source, low thermal resistance, low parasitic inductance, supports high-frequency high-current operation, while saving PCB area and improving thermal paths.
Domain and module applications：
High-power DC-DC converters: In synchronous rectification or power stage main switches, ultra-low internal resistance significantly reduces conduction losses, greatly improving heavy-load efficiency, aiding module miniaturization.
Server and communication power supplies: 40V withstand voltage covers 12V bus and 48V intermediate bus; 0.7mΩ internal resistance combined with 150A current capacity meets high-current power supply needs for AI accelerator cards, switches, etc.
Automotive electrical systems: Suitable for 12V/24V vehicle voltage domains, such as body controllers, electric power steering, smart fuse boxes; wide safe operating area handles stall and inrush currents.
Battery protection and BMS: Low internal resistance reduces protection board heat generation; 150A continuous current can cover power battery main circuits; microsecond shutdown capability ensures short-circuit safety.
Low-voltage high-power motor drives: Low PWM switching losses, smooth motor operation, significantly reduced controller temperature rise, suitable for power tools, drones, robot joints, etc.
Energy storage and UPS inverters: In low-side buck-boost and battery switching circuits, voltage and current margins are sufficient, ensuring long-term reliability.
Electric equipment and power modules: LFPAK56 package suitable for reflow soldering mass production; combined with SGT technology, achieves efficient thermal management on high-density power boards. Selection Summary: NVMJS0D9N04CLTWG-VB, with its 0.7mΩ ultra-low on-resistance, 150A high current carrying capacity, and LFPAK56 low-parasitic package, redefines the performance benchmark for low-voltage high-current MOSFETs. It is an excellent choice for 40V-class high-power, high-efficiency applications, especially for projects with stringent requirements for conduction loss, thermal performance, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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