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NVMJS0D8N04CLTWG-VB Product details
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NVMJS0D8N04CLTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching applications. Using SGT (Split Gate) technology, it achieves an excellent balance between ultra-low on-resistance and switching performance. The LFPAK56 package combines high-current heat dissipation capability with a compact footprint. The combination of 40V voltage rating, 150A current capability, and 0.7mΩ on-resistance makes it a preferred device for high power density power systems, motor drives, and battery management applications, especially suitable for projects with stringent heat dissipation and efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Compatible with 12V/24V/36V systems, providing ample spike voltage margin, significantly reducing avalanche breakdown risk, improving system reliability.
VGS=±20V: Compatible with a wide range of gate drives, can directly connect to MCUs/PMICs or dedicated gate drivers, simplifying peripheral design.
Vth=3V (Typical): Good switching threshold characteristics, ensuring both anti-interference capability and deep conduction with 10V drive.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction losses, greatly reducing temperature rise, allowing for smaller heatsinks or copper areas.
ID=150A: Robust continuous current capability, confidently handling harsh conditions such as motor stalling, surge loads, and high-power DC-DC converters.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, while saving PCB space and improving power cycling reliability.
VGS=±20V: Compatible with a wide range of gate drives, can directly connect to MCUs/PMICs or dedicated gate drivers, simplifying peripheral design.
Vth=3V (Typical): Good switching threshold characteristics, ensuring both anti-interference capability and deep conduction with 10V drive.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction losses, greatly reducing temperature rise, allowing for smaller heatsinks or copper areas.
ID=150A: Robust continuous current capability, confidently handling harsh conditions such as motor stalling, surge loads, and high-power DC-DC converters.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, while saving PCB space and improving power cycling reliability.
Domain and module applications：
High-power DC-DC converters: In synchronous rectification or low-side switches, 0.7mΩ ultra-low internal resistance significantly improves heavy-load efficiency, reduces converter temperature rise, facilitating module miniaturization.
Motor drives and control: 150A high current margin combined with low switching losses, suitable for brushless DC motors, power tools, and drone ESCs, enabling smoother PWM control.
Battery protection and BMS: Fast response and extremely low conduction voltage drop reduce protection board self-heating, adapting to high-rate charge/discharge and short-circuit protection needs.
Vehicle power systems: 40V withstand voltage covers 12V/24V vehicle bus; wide safe operating area suitable for start-stop systems, electric power steering, and on-board chargers.
Energy storage and inverters: Low-voltage high-current transmission path, usable as battery-side switching switch, balancing low loss and high reliability.
Server power modules: LFPAK56 package with low parasitic parameters, suitable for high-efficiency, high-power-density VRM and POL power supply designs. Selection Summary: NVMJS0D8N04CLTWG-VB, with its 0.7mΩ ultra-low on-resistance, 150A high current capability, and advanced SGT process, becomes a high-performance general-purpose choice for 40V low-voltage high-current switching applications, especially suitable for projects with strict requirements for efficiency, heat dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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