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IAUCN04S7N010GATMA1-VB Product details
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Still troubled by high heat generation and low efficiency in low-voltage, high-current applications? VBsemi IAUCN04S7N010GATMA1-VB is here to help! This N-MOSFET in an LFPAK56 package, using advanced SGT technology, features an ultra-low on-resistance of only 0.7mΩ while handling a massive 150A current, acting like a 'lossless switch' on low-voltage power paths. The 40V withstand voltage combined with ultra-low conduction losses makes power conversion, motor drive, and battery protection designs more effortless, making it the top choice for engineers pursuing ultimate efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (ample margin in low-voltage systems, reliable and stable)
Drive Range: ±20V (compatible with various gate drive voltages, flexible adaptation)
Turn-On Threshold: 3V (typical, clear and defined switching characteristics)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (minimal conduction loss, negligible heat generation)
High Current Capability: 150A (supports high current, suitable for high power density designs)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, ideal for compact high-current layouts)
Technology: SGT (Shielded Gate Trench, low switching loss, excellent EMI performance)
Drive Range: ±20V (compatible with various gate drive voltages, flexible adaptation)
Turn-On Threshold: 3V (typical, clear and defined switching characteristics)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (minimal conduction loss, negligible heat generation)
High Current Capability: 150A (supports high current, suitable for high power density designs)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, ideal for compact high-current layouts)
Technology: SGT (Shielded Gate Trench, low switching loss, excellent EMI performance)
Domain and module applications：
– One Chip for Six High-Power Scenarios: High-Efficiency Synchronous Rectification, DC-DC Modules, Enabling Power Supply Miniaturization
Motor Drive: Power Tools, Drones, Automotive Motors, Smooth and Powerful High-Current Output
Battery Protection: Charge and Discharge Management for Power Battery Packs, Instantaneous Fault Current Interruption, System Protection
Automotive Electronics: On-Board Power Supplies, Body Control, Meeting Wide Temperature Range and High Reliability Requirements
Server Power Supplies: Low-Voltage, High-Current Power Distribution, Reducing Conduction Losses, Improving Overall Energy Efficiency
Industrial Control: High-Frequency Switching Circuits, Power Modules, Fast Speed, Low Loss, Stable and Reliable IAUCN04S7N010GATMA1-VB – Ultra-Low On-Resistance, Ultra-High Current, Making Your Low-Voltage, High-Power Design a One-Stop Solution!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
