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PSMN4R8-100YSEX-VB Product details

Product introduction:

PSMN4R8-100YSEX-VB is a Single N-MOSFET optimized for medium-to-high-power switching scenarios. Its SGT technology balances ultra-low conduction loss with excellent switching performance, and the LFPAK56 package achieves a good balance between heat dissipation and board space usage. With a combination of 100V withstand voltage, 180A current capability, and 3.0mΩ on-resistance, it is an ideal power device choice for high-voltage, high-current applications such as server power supplies, motor drives, and energy storage systems, especially suited for industrial projects with stringent efficiency and power density requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 100V 1.5V 180A 3.0(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 100V 1.5V 180A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 100V 1.5V 180A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N

VDS=100V: Suitable for 48V/60V/72V systems and 100V-level bus architectures, providing ample voltage margin for spikes, significantly enhancing system avalanche and surge withstand capability.
VGS=±20V: Compatible with 10V~12V drive levels, can be directly controlled by gate drive ICs or dedicated drivers, simplifying peripheral design and ensuring full turn-on.
Vth=1.5V (typical): Moderate threshold voltage with strong anti-interference capability, while ensuring deep linear region operation under 10V drive, effectively reducing conduction losses.
RDS(on)=3.0mΩ @ VGS=10V: Ultra-low on-resistance, minimizing conduction losses at full load, significantly reducing temperature rise, enabling smaller heatsinks or higher power density.
ID=180A: Ample continuous current margin to handle high-power loads, motor stall conditions, and transient surges, meeting high-reliability design requirements.
Package LFPAK56: Low parasitic inductance and low thermal resistance, supporting high-current high-frequency switching, while compatible with standard SMT processes for mass production.

Domain and module applications:


Server & Communication Power Supplies: Ultra-low on-resistance improves synchronous rectification efficiency, reduces overall power consumption, meeting 80PLUS high energy efficiency certification requirements.
Motor Drives & Industrial Control: 100V voltage rating covers mainstream BLDC and PMSM bus voltages; low switching losses support higher PWM frequencies for smoother control.
Energy Storage & Battery Management Systems: High current carrying capacity meets charge/discharge circuit requirements; low internal resistance reduces protection board heat generation, extending system life.
DC-DC Converters: Replaces traditional DPAK devices in high-voltage buck or boost topologies, significantly improving heavy-load efficiency, beneficial for module miniaturization and high power density design.
Power Tools & Garden Machinery: 180A peak current margin handles startup and stall conditions; robust LFPAK56 package suits high-vibration environments.
Automotive Auxiliary Power Supplies: Wide voltage range and low on-resistance adapt to 24V/48V automotive buses, providing a highly reliable power conversion path.
UPS & Inverters: High-frequency switching characteristics combined with low losses improve inverter efficiency, reduce filter component size, and lower system cost. Selection Summary: PSMN4R8-100YSEX-VB, with its core combination of 100V voltage rating, 3.0mΩ on-resistance, and 180A high current capability, along with SGT technology and LFPAK56 package, provides a high-efficiency, high-reliability, high-power-density solution for medium-to-high-power switching applications. It is particularly suitable for industrial and automotive projects with strict requirements for thermal management, overcurrent capability, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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