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SIJ4106DP-T1-GE3-VB Product details
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Still troubled by high heat and large voltage drops in high-current switching solutions? VBsemi SIJ4106DP-T1-GE3-VB is here to break the deadlock! This LFPAK56-packaged N-MOSFET sets a new benchmark in its class with 100V withstand voltage and 180A ultra-high current capability, achieving an ultra-low on-resistance of 3.0mΩ (@10V), earning it the nickname "low-loss high-current monster." SGT technology delivers extremely low gate charge and faster switching speeds, combined with a 1.5V logic threshold, making high-power power supply designs more efficient, compact, and reliable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | 3.0(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 100V (covers high-stress scenarios like telecom power supplies, motor drives)
Drive Range: ±20V (compatible with multiple gate drives, strong overvoltage withstand capability)
Threshold Voltage: 1.5V (supports low-voltage logic direct drive, simplifies circuitry)
Ultra-Low On-Resistance: 3.0mΩ @ 10V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 180A (single device handles high current, reduces paralleling)
Package: LFPAK56 (low thermal resistance, high heat dissipation, suitable for high-density power board design)
Technology: SGT (Shielded Gate Trench, optimized switching and conduction overall performance)
Drive Range: ±20V (compatible with multiple gate drives, strong overvoltage withstand capability)
Threshold Voltage: 1.5V (supports low-voltage logic direct drive, simplifies circuitry)
Ultra-Low On-Resistance: 3.0mΩ @ 10V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 180A (single device handles high current, reduces paralleling)
Package: LFPAK56 (low thermal resistance, high heat dissipation, suitable for high-density power board design)
Technology: SGT (Shielded Gate Trench, optimized switching and conduction overall performance)
Domain and module applications：
– Six High-Performance Scenarios, One Solution
Communication Power Supplies: Server rectifier modules, base station power supplies, high efficiency, low temperature rise
Motor Drives: Power tools, drone motor control, ample power, fast response
Energy Storage Systems: Lithium battery charge/discharge management, inverter bus switches, high current margin
Automotive Electronics: Automotive DC-DC, automotive auxiliary load drive, impact resistant, more durable
Industrial Control: PLC power supplies, inverter power stages, stable operation under harsh conditions
Power Conversion: Synchronous rectification, UPS, power adapters, aiding system miniaturization and energy saving. SIJ4106DP-T1-GE3-VB – High current, low loss, strong heat dissipation, making every watt count!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
