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PSMN5R5-100YSFX-VB Product details
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VBsemi PSMN5R5-100YSFX-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product features excellent conduction characteristics and high current carrying capacity, suitable for various high-power power conversion and control applications. Manufactured using advanced SGT technology, it offers a drain-source voltage (VDS) of 100V and can operate stably under a gate-source voltage (VGS) range of ±20V. The product is packaged in LFPAK56, combining efficient heat dissipation with a compact structural design to meet the needs of high-density power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | 3.0(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.5V
On-Resistance (VGS=10V): 3.0 mΩ
Maximum Drain Current (ID): 180A
Package: LFPAK56
Technology: SGT
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.5V
On-Resistance (VGS=10V): 3.0 mΩ
Maximum Drain Current (ID): 180A
Package: LFPAK56
Technology: SGT
Domain and module applications：
1. High-Efficiency Switching Power Supplies: PSMN5R5-100YSFX-VB is suitable for high-efficiency switching power supply modules such as server power supplies and communication power supplies. Its extremely low on-resistance effectively reduces losses and improves conversion efficiency.
2. Motor Drive Control: This device can be used in industrial motor drives, power tools, and robot servo drive modules, supporting high current output for precise motor start/stop and speed regulation.
3. Automotive Power Systems: In automotive DC-DC converters, battery management, and auxiliary power systems, this MOSFET can withstand high voltage and high current surges, providing reliable protection for automotive electronics.
4. Battery Protection and Energy Storage: Suitable for energy storage devices, UPS, and lithium battery protection circuits, used as high-side or low-side switch elements to ensure safe and efficient charging and discharging processes.
5. Power Inverters: In power conversion applications such as photovoltaic inverters and variable frequency drives, this device leverages SGT technology and low on-resistance to significantly reduce switching losses and improve system reliability.
6. Load Switches and Power Distribution: Can be used for load switches and hot-swap power management circuits in server motherboards and communication equipment, enabling stable on/off control of high-power lines.
7. High-Power DC-DC Converters: In synchronous rectification and high-current buck-boost circuits, this model provides excellent switching performance and current handling capability, aiding in miniaturization and high-efficiency design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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