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AG050FPS4FRATCB-VB Product details
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You are designing a high-power-density, high-current power module with limited board-level space, yet it must withstand hundreds of amperes of current surge. Traditional TO-packaged MOSFETs are bulky and have cumbersome heat dissipation designs, while ordinary SMD devices struggle to balance low conduction losses and high reliability. VBsemi AG050FPS4FRATCB-VB is designed to solve this contradiction—it uses a compact LFPAK56 package, integrating 100V withstand voltage, 180A current carrying capacity, and an on-resistance of only 3.0mΩ, combined with advanced SGT trench technology, allowing high-power conversion designs to no longer compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | 3.0(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 100V | 1.5V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Voltage 100V, meets industrial bus voltage requirements with ample safety margin
- Gate drive range ±20V, compatible with 10V logic drive, strong overvoltage tolerance
- Threshold voltage 1.5V, can be partially turned on at low voltage, facilitating drive circuit design
- On-resistance 3.0mΩ (at 10V drive), extremely low conduction loss, significantly reduced heat generation
- Maximum current 180A, small package can still handle ultra-high current
- Technology platform SGT (Shielded Gate Trench), optimized switching performance and conduction characteristics
- Gate drive range ±20V, compatible with 10V logic drive, strong overvoltage tolerance
- Threshold voltage 1.5V, can be partially turned on at low voltage, facilitating drive circuit design
- On-resistance 3.0mΩ (at 10V drive), extremely low conduction loss, significantly reduced heat generation
- Maximum current 180A, small package can still handle ultra-high current
- Technology platform SGT (Shielded Gate Trench), optimized switching performance and conduction characteristics
Domain and module applications：
- High-Power DC-DC Converters / Synchronous Rectification – As main switch or rectifier, utilizing extremely low RDS(on) to improve conversion efficiency and reduce temperature rise.
- Power Tools / Garden Machinery Motor Drives – Withstands high inrush starting currents, providing strong and smooth power output, extending battery life.
- Lithium Battery Protection Boards / BMS – Quickly disconnects the main circuit during overcurrent or short circuit, with 180A high current capability suitable for high-capacity battery packs.
- Automotive Power Supplies / 48V-12V Conversion Modules – Withstands automotive voltage fluctuations, providing efficient and reliable power switching for the vehicle's low-voltage system.
- Server Power Supplies / Telecom Base Station Power Supplies – Achieves high-density power conversion in compact 1U/2U power architectures, simplifying thermal design.
- Inverter Welders / UPS Uninterruptible Power Supplies – Utilizes the low-loss characteristics of SGT technology to enhance stability and reliability under heavy load conditions.
- Motor Controllers / Drone ESCs – Maintains excellent performance under high-frequency switching, helping achieve smaller controller size and higher power-to-weight ratio. One-sentence summary: The AG050FPS4FRATCB-VB is not an ordinary MOSFET; it is the 'low-loss switch' and 'power core' in your high-current, high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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