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RD3N07BBHTL1-VB Product details
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You are designing a high-power-density DC-DC converter or automotive-grade power module, with an input bus voltage up to 80V and load currents often reaching hundreds of amperes. Ordinary MOSFETs either have insufficient voltage withstand capability or prohibitively high conduction losses. VBsemi RD3N07BBHTL1-VB is designed for this—it integrates 80V withstand voltage, 120A current carrying capacity, and an on-resistance of only 4.6mΩ in a TO252 package, combined with SGT (Shielded Gate Trench) technology, allowing the efficiency and temperature rise control of high-power switching power supplies to no longer be compromised.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 120A | 4.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Voltage 80V, easily covers 48V/60V bus bars and automotive 12V-24V systems
Gate drive range ±20V, compatible with multiple drive voltages, strong overvoltage tolerance
Threshold voltage 3V, ensures stable switching under high voltage environments
On-resistance 4.6mΩ (at 10V drive), extremely low loss under high current conditions
Maximum current 120A, high power in a small package
Advanced SGT technology – lower FOM, improved switching speed, reduced switching loss
Gate drive range ±20V, compatible with multiple drive voltages, strong overvoltage tolerance
Threshold voltage 3V, ensures stable switching under high voltage environments
On-resistance 4.6mΩ (at 10V drive), extremely low loss under high current conditions
Maximum current 120A, high power in a small package
Advanced SGT technology – lower FOM, improved switching speed, reduced switching loss
Domain and module applications：
DC-DC Buck/Boost Modules – As main switching or synchronous rectifier transistors, significantly reducing conduction and switching losses, improving conversion efficiency.
Motor Drive Controllers – Used in power tools, e-bikes, drones, etc., 120A high current carrying capacity handles stall and transient surges.
Battery Protection Systems (BMS) – In 80V energy storage or power battery packs, achieving fast overcurrent and short-circuit protection, ensuring system safety.
Automotive Power Supplies and On-Board Chargers – Withstands automotive voltage surges, providing stable power switching solutions.
Server/Telecom Power Supplies – High efficiency, low heat generation, suitable for high-density on-board power supply designs.
Industrial Power Supplies and Inverters – Utilizes the high-speed switching characteristics of SGT technology to reduce transformer size and increase power density. One-sentence summary: The RD3N07BBHTL1-VB is not an ordinary MOSFET; it is the 'efficiency engine' and 'power switching core' of your 80V-level high-current power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
