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DMT64M3SK3-13-VB Product details

Product introduction:

DMT64M3SK3-13-VB is a Single N-MOS deeply optimized for high-current low-voltage power switching scenarios. It employs advanced SGT (Split Gate Trench) technology, achieving an excellent balance between conduction losses and switching speed. The TO252 (DPAK) package offers good heat dissipation capability and current carrying capacity, suitable for medium-to-high power density applications. The combination of 60V voltage rating, 120A current capacity, and an ultra-low on-resistance of 3.4mΩ makes it a reliable power stage option for power tools, battery protection, DC-DC conversion, and automotive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 3V 120A 4(mΩ) 3.4(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 3V 120A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 3V 120A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
VDS=60V: Suitable for 12V/24V/48V systems, providing ample voltage margin to effectively suppress switching spikes and enhance system reliability.
VGS=±20V: Compatible with a wide gate drive range, supports 4.5V logic level drive, and can also be driven with 10V to fully reduce on-resistance.
Vth=3V (Typical): Moderate threshold voltage with strong noise immunity, ensuring clear drive conditions, suitable for industrial and automotive environments.
RDS(on)=4mΩ @ VGS=4.5V / 3.4mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction losses at full load, significantly reducing temperature rise and simplifying thermal design.
ID=120A: Ample continuous current capability to handle steady-state and peak current demands of high-power loads, suitable for high-current switching circuits.
Package TO252: Mature DPAK package with heat sink pad easy for PCB copper spreading for heat dissipation, balancing solder process compatibility and thermal performance.
Technology SGT: Shielded gate structure reduces Miller capacitance, lowers switching losses, supports higher frequency operation, and improves avalanche ruggedness.

Domain and module applications:


Power Tools and Garden Machinery: High current drive capability matches the peak power of brushless motors; low on-resistance reduces ESC heat generation, extending tool runtime.
Battery Protection and BMS: Milliohm-level internal resistance reduces protection board self-consumption; 60V voltage tolerance adapts to multi-cell lithium battery packs; fast switching characteristics ensure reliable shutdown under abnormal conditions.
DC-DC Converters and Synchronous Rectification: 3.4mΩ ultra-low impedance significantly improves heavy-load efficiency; replaces traditional Schottky diodes, aiding module miniaturization.
Vehicle Auxiliary Power and Motor Control: Wide voltage tolerance range and strong surge tolerance adapt to 12V/24V vehicle bus; SGT technology ensures controllable temperature rise under high-frequency PWM.
Server Power Supplies and Communication Equipment: High current density combined with low thermal resistance package meets the high-current conversion needs of board-level power supplies, improving system energy efficiency.
Low-Voltage High-Current Switching Circuits: 120A continuous current margin is ample for power path management, welding machines, and UPS inverter stages, offering high reliability. Selection Summary: DMT64M3SK3-13-VB achieves an excellent balance between voltage tolerance, on-resistance, current capability, and package heat dissipation. SGT technology brings low switching losses and high reliability, making it an ideal choice for 60V high-current switching applications, especially suitable for power systems and motor drive projects with strict requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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