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2SJ634-S-TL-E-VB Product details
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Are you designing a high power density power system but facing issues with high conduction voltage drop and heat generation in P-channel MOSFETs? Common devices either lack sufficient voltage tolerance or take up too much board space. VBsemi 2SJ634-S-TL-E-VB provides the ideal answer—it uses a TO251 package, compressing the on-resistance to 66mΩ (at 10V drive) under -60V withstand voltage and -20A high current capability, bringing lower losses and higher reliability to negative voltage topologies like battery management and power conversion, allowing high-power P-channel design without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 80(mΩ) | 66(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
- Voltage -60V, covering most load switch and BMS applications
- Gate drive range ±20V, compatible with a wide range of control signals
- Threshold voltage -1.7V, providing clear switching behavior
- On-resistance 66mΩ (10V drive) / 80mΩ (4.5V drive), lower losses
- Maximum current -20A, TO251 package easily handles high current
- Trench technology, optimized switching performance and conduction characteristics
- Gate drive range ±20V, compatible with a wide range of control signals
- Threshold voltage -1.7V, providing clear switching behavior
- On-resistance 66mΩ (10V drive) / 80mΩ (4.5V drive), lower losses
- Maximum current -20A, TO251 package easily handles high current
- Trench technology, optimized switching performance and conduction characteristics
Domain and module applications：
- **Battery Protection Board / BMS** – Acts as the main discharge switch, handles high-rate current, reduces temperature rise, extends battery life.
- **Power Reverse Polarity Protection** – Utilizes P-channel low on-resistance to achieve near-zero loss reverse polarity protection on the negative rail.
- **Motor Drive Control** – Used for low-side/high-side drive of DC brushed motors, enabling smooth speed control with PWM.
- **DC-DC Converter** – Serves as a synchronous rectifier in negative voltage buck-boost topologies, improving conversion efficiency.
- **Automotive Electronics Auxiliary Power Supply** – Withstands voltage fluctuations in vehicle systems, providing stable on/off control for sensors and controllers.
- **Industrial Control and Automation** – Adapts to high-reliability switching circuits, providing robust power path management.
**One-sentence summary:** The 2SJ634-S-TL-E-VB is an 'efficiency cornerstone' designed for high-voltage, high-current P-channel applications, using low on-resistance and a robust TO251 package to help you build cooler, more durable power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
