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2SJ634-E-VB Product details

Product introduction:

2SJ634-E-VB is a Single P-MOS deeply optimized for medium power switching applications. The Trench process balances low conduction losses and high switching speed, while the TO251 package achieves a good trade-off between heat dissipation and assembly convenience. The combination of 60V withstand voltage, -20A current capacity, and 66mΩ (at 10V) on-resistance makes it a reliable choice for low-voltage negative power rails, battery protection, and load switch applications, especially suitable for industrial and consumer systems with clear requirements for voltage margin and thermal performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -60V -1.7V -20A 80(mΩ) 66(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
VDS=-60V: Suitable for 12V/24V/48V systems, providing ample margin for voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of gate drives, allowing flexible use with dedicated gate driver ICs or MCU interface circuits.
Vth=-1.7V (Typical): Low threshold voltage enables the device to enter full conduction with moderate gate drive.
RDS(on)=66mΩ @ VGS=-10V: Typical on-resistance, controllable full-load loss, helps reduce system temperature rise.
RDS(on)=80mΩ @ VGS=-4.5V: Supports low-voltage gate drive scenarios, facilitating use with simplified power supply conditions.
ID=-20A: Ample continuous current margin to handle steady-state and peak demands of most power loads.
Package TO251: Through-hole package with low thermal resistance and short heat dissipation path, suitable for power circuits requiring reliable soldering and good heat dissipation.

Domain and module applications:


Power Reverse Protection: P-MOS high-side series structure is simple and reliable, low on-voltage drop reduces system power consumption, 60V voltage rating adapts to multiple bus voltages.
Battery Discharge Management: Low loss on negative power path, supports high current discharge, suitable for medium power scenarios like power tools and portable devices.
Load Switch: Enables fast load disconnection, works with logic control for low standby power consumption, wide gate voltage range improves drive compatibility.
DC-DC Converter Auxiliary Circuit: Used for negative voltage regulation or synchronous rectification auxiliary path, reducing overall loss and improving conversion efficiency.
Motor Drive: P-MOS high-side drive is simple, good PWM switching characteristics, suitable for small to medium power brushed motors and fan control.
Automotive Auxiliary Power Supply: 60V voltage rating covers transient surges in 12V/24V vehicle systems, TO251 package facilitates heat dissipation design. Selection Summary: The 2SJ634-E-VB achieves a balance between voltage rating, current capability, and package heat dissipation. It is a cost-effective general-purpose choice for 60V negative power switch applications, especially suitable for power control projects with clear requirements for conduction loss and thermal reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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