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2SJ598-AY-VB Product details

Product introduction:

2SJ598-AY-VB is a high-performance P-channel MOSFET in a TO251 package, with a -60V withstand voltage and -20A current capacity. Enhanced by Trench technology, it features a low on-resistance of 66mΩ (at 10V drive), resulting in low losses and high efficiency. The gate drive is flexible with a wide range of ±20V, compatible with various control circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -60V -1.7V -20A 80(mΩ) 66(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
Voltage: -60V
Drive Voltage: ±20V
Threshold Voltage: -1.7V
On-Resistance (4.5V Drive): 80mΩ
On-Resistance (10V Drive): 66mΩ
Maximum Current: -20A
Package: TO251
Technology: Trench

Domain and module applications:


Power Load Switch → Reliable switching, low loss
Battery Protection Circuit → Precise protection, safe and durable
DC-DC Converter → Efficient conversion, low temperature rise
Motor Drive Control → Fast response, strong impact resistance
Industrial Control Equipment → High voltage rating, stable and reliable
Automotive Electronics Auxiliary Circuit → Wide temperature operation, vibration resistant and durable
LED Power Supply and Dimming → Constant current output, energy efficient
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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