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2SJ245L-E-VB Product details

Product introduction:

2SJ245L-E-VB is a Single P-MOS deeply optimized for low to medium voltage power switching applications. The Trench process balances low switching losses and high reliability, while the TO251 package achieves a good trade-off between thermal performance and ease of installation. The combination of -60V withstand voltage, -20A current capacity, and 66mΩ on-resistance makes it a reliable alternative to traditional DPAK or SOP-8 packaged devices, especially suitable for power applications requiring negative voltage control, high-density layout, and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -60V -1.7V -20A 80(mΩ) 66(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -60V -1.7V -20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
VDS=-60V: Suitable for 12V/24V/36V/48V systems, providing ample margin for negative voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of logic level drives, can directly connect to MCU/PWM controllers, simplifying gate drive design.
Vth=-1.7V (Typical): Low threshold voltage ensures full conduction even under low-voltage drive conditions, suitable for battery-powered and low-voltage control scenarios.
RDS(on)=66mΩ @ VGS=10V, 80mΩ @ VGS=4.5V: Low on-resistance, lower full-load temperature rise, effectively reduces heatsink size and system power consumption.
ID=-20A: Ample continuous current margin to handle peak current demands of most motors, power supplies, and load switches.
Package TO251: Through-hole package with low thermal resistance and short heat dissipation path, suitable for power modules requiring good heat dissipation in space-constrained environments.

Domain and module applications:


Power Reverse Protection Circuit: P-MOS high-side drive requires no charge pump, low on-resistance reduces power loss, improving system efficiency.
Battery Charge and Discharge Management: Sufficient voltage margin, supports negative voltage turn-off control, low internal resistance reduces self-heating of the protection board.
Low-Voltage Motor Drive: Low PWM switching loss, smooth motor commutation, significantly reduced controller temperature rise, suitable for power tools and small fans.
Load Switch and Power Distribution Module: Logic level direct drive, combined with -60V voltage rating, suitable for industrial control, communication equipment, and automotive auxiliary power supplies.
DC-DC Converter Auxiliary Circuit: Can be used for negative voltage rail or reverse polarity protection, Trench process ensures stable high-frequency switching characteristics.
Automotive Electronics System: Wide operating temperature range and high voltage capability adapt to 12V/24V automotive bus, high reliability, strong vibration resistance.
Selection Summary: The 2SJ245L-E-VB achieves a balance between voltage capability, on-resistance, current margin, and package heat dissipation. It is a cost-effective general-purpose choice for -60V P-channel switching applications, especially suitable for power control projects with strict requirements for reliability and thermal performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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