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FCU3400N80Z-VB Product details
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You are designing a high-voltage auxiliary power supply that needs to withstand 800V bus voltage while achieving reliable switching in a limited TO251 package. Ordinary MOS tubes either have insufficient withstand voltage or high switching loss. VBsemi FCU3400N80Z-VB is designed for this—it integrates 800V withstand voltage, 2A current carrying capacity, and superjunction (SJ_Multi-EPI) technology into a compact single-tube package, allowing high-voltage low-current applications to achieve better conduction and switching performance, providing a solid foundation for power supply design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- Withstand Voltage 800V, meets high-voltage system safety margin
- Gate Drive Range ±30V, compatible with common high-voltage gate drive circuits
- Threshold Voltage 3.5V, simple and reliable drive design
- On-Resistance 2600mΩ (at 10V drive), stable conduction characteristics in high-voltage devices
- Maximum Current 2A, suitable for auxiliary power, high-voltage detection and other low-current scenarios
- Uses SJ_Multi-EPI Super Junction process, optimizes balance between on-resistance and switching performance
- TO251 package, suitable for through-hole high-density layout
- Gate Drive Range ±30V, compatible with common high-voltage gate drive circuits
- Threshold Voltage 3.5V, simple and reliable drive design
- On-Resistance 2600mΩ (at 10V drive), stable conduction characteristics in high-voltage devices
- Maximum Current 2A, suitable for auxiliary power, high-voltage detection and other low-current scenarios
- Uses SJ_Multi-EPI Super Junction process, optimizes balance between on-resistance and switching performance
- TO251 package, suitable for through-hole high-density layout
Domain and module applications：
- **Switching Power Supply Auxiliary Winding Supply** – As a high-voltage startup or auxiliary switch, reliably withstands 800V bus voltage, reducing system complexity.
- **Industrial Control Power Supply** – Used in high-voltage side switches and surge suppression circuits, enhancing impact resistance.
- **LED High-Voltage Constant Current Driver** – Utilizes the low switching losses of super junction devices for efficient and stable constant current control.
- **Smart Meter / Power Metering Module** – Acts as a switch in high-voltage sampling and power management circuits, ensuring long-term stable operation.
- **Electric Vehicle Charger High-Voltage Section** – Used as an auxiliary switch in LLC or flyback topologies, optimizing efficiency and temperature rise under high-voltage conditions.
- **Photovoltaic Inverter Auxiliary Power Supply** – Withstands high-voltage fluctuations from solar panels, providing a reliable power rail for control circuits. **One-sentence summary: The FCU3400N80Z-VB is not an ordinary MOS tube; it is the "voltage withstand guardian" and "efficiency champion" of your high-voltage auxiliary power supply design.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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