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TK12Q60W,S1VQ-VB Product details
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You are designing a high power density switching power supply that needs to handle a 600V high-voltage bus, yet control conduction loss and temperature rise. Ordinary high-voltage MOS tubes either have high on-resistance or limited switching speed. VBsemi TK12Q60W is designed for this—it uses SJ_Multi-EPI superjunction technology, integrating 600V withstand voltage, 11A continuous current capability, and low on-resistance of 380mΩ in a TO251 package, allowing high-voltage power supply design to achieve an ideal balance between performance and cost.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Withstand Voltage 600V, covers three-phase rectification and industrial high-voltage scenarios
Gate Drive Range ±30V, compatible with various gate drive circuits
Threshold Voltage 3.5V, strong anti-interference capability, clear switching characteristics
On-Resistance 380mΩ (at 10V drive), maintains low loss even at high voltage
Maximum Current 11A, sufficient to drive medium power loads
SJ_Multi-EPI Super Junction Technology – Optimizes on-resistance and switching performance, reduces reverse recovery charge
Gate Drive Range ±30V, compatible with various gate drive circuits
Threshold Voltage 3.5V, strong anti-interference capability, clear switching characteristics
On-Resistance 380mΩ (at 10V drive), maintains low loss even at high voltage
Maximum Current 11A, sufficient to drive medium power loads
SJ_Multi-EPI Super Junction Technology – Optimizes on-resistance and switching performance, reduces reverse recovery charge
Domain and module applications：
Switching Power Supply / Adapter – As a high-voltage main switch, effectively improves conversion efficiency and reduces thermal stress.
LED Lighting Driver – Utilizes low on-resistance and high voltage withstand capability to achieve highly reliable constant voltage/constant current control.
Industrial Control Auxiliary Power Supply – Withstands wide voltage fluctuations, providing stable power to the control system.
Photovoltaic Inverter / Microinverter – Used in DC-DC boost or inverter bridge arms, leveraging the low-loss advantage of super junction.
Charging Station Auxiliary Power Supply – Operates stably under high-voltage input, ensuring long-term system operation.
Home Appliance Power Module – Suitable for the high-voltage power section of variable frequency controllers in air conditioners, refrigerators, etc. One-sentence summary: The TK12Q60W is not an ordinary high-voltage MOS tube; it is a "super junction weapon" that balances efficiency and stability in your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
