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TK8Q65W,S1Q-VB Product details
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You are designing a high-voltage switching power supply that needs to withstand 600V bus voltage while minimizing conduction loss. Ordinary high-voltage MOS tubes often have high on-resistance, causing severe heating and increased heat dissipation costs. VBsemi TK8Q65W,S1Q-VB is designed for this—based on SJ_Multi-EPI superjunction technology, it achieves 600V withstand voltage, 7A current carrying capacity, and low on-resistance of 650mΩ (10V drive) in a TO251 package, simultaneously improving the efficiency and reliability of high-voltage systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | 650(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Withstand Voltage 600V, sufficient for three-phase rectification, PFC and other high-voltage scenarios
Gate Drive Range ±30V, compatible with wide drive signals, stronger overvoltage capability
Threshold Voltage 3.5V, stable turn-on with standard logic levels
On-Resistance 650mΩ (at 10V drive), maintains low loss even at high voltage
Maximum Current 7A, TO251 package offers good heat dissipation, suitable for medium power designs
Technology Type SJ_Multi-EPI Super Junction process, better on-resistance per unit area, excellent switching characteristics
Gate Drive Range ±30V, compatible with wide drive signals, stronger overvoltage capability
Threshold Voltage 3.5V, stable turn-on with standard logic levels
On-Resistance 650mΩ (at 10V drive), maintains low loss even at high voltage
Maximum Current 7A, TO251 package offers good heat dissipation, suitable for medium power designs
Technology Type SJ_Multi-EPI Super Junction process, better on-resistance per unit area, excellent switching characteristics
Domain and module applications：
Switching Power Supply / Adapter – As a high-voltage switch, significantly reduces conduction losses, improving overall system efficiency.
PFC Power Factor Correction Circuit – Utilizes the low on-resistance and fast switching capability of the super junction to reduce EMI and heat accumulation.
LED Driver Power Supply – Operates stably in high-voltage constant current topologies, extending power supply lifespan.
AC-DC Auxiliary Power Supply – Withstands wide input voltage fluctuations, providing reliable power conversion.
Inverter / Photovoltaic Microinverter – Competent for high-voltage bus switching, aiding the efficient operation of new energy equipment.
Industrial Control Power Supply – The compact TO251 package facilitates layout, meeting high reliability requirements. One-sentence summary: The TK8Q65W,S1Q-VB is not an ordinary MOS tube; it is the "efficiency gatekeeper" balancing voltage withstand, low losses, and thermal advantages in your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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