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SPS04N60C3E8177AKMA1-VB Product details
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Still troubled by loss and heat dissipation issues in high-voltage switching power supplies? Let VBsemi SPS04N60C3E8177AKMA1-VB solve your worries! This TO251 packaged N-MOS tube uses SJ_Multi-EPI superjunction process, with withstand voltage up to 600V, typical on-resistance of 850mΩ @ 10V, and current capability of 5A. The superjunction structure brings lower conduction loss and faster switching speed, especially suitable for high-efficiency, high-density power conversion designs, making it a "reliable choice" for high-voltage engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 5A | 850(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Voltage Rating: 600V (High-voltage application, ample margin)
Drive Range: ±30V (Compatible with various gate drive circuits)
Threshold Voltage: 3.5V (Reliable drive at standard logic levels)
On-Resistance: 850mΩ @ 10V (Low conduction losses, minimal heat generation)
Current Capability: 5A (Stable output in TO251 package)
Package: TO251 (Through-hole, excellent heat dissipation, easy to solder)
Process: SJ_Multi-EPI (Super-junction multi-epitaxial, optimized conduction and switching performance)
Drive Range: ±30V (Compatible with various gate drive circuits)
Threshold Voltage: 3.5V (Reliable drive at standard logic levels)
On-Resistance: 850mΩ @ 10V (Low conduction losses, minimal heat generation)
Current Capability: 5A (Stable output in TO251 package)
Package: TO251 (Through-hole, excellent heat dissipation, easy to solder)
Process: SJ_Multi-EPI (Super-junction multi-epitaxial, optimized conduction and switching performance)
Domain and module applications：
Switching Power Supply: Main switch for adapters, chargers, high efficiency, low temperature rise
LED Lighting Driver: High-voltage constant current scheme, stable and reliable, long lifespan
Industrial Control Power Supply: Wide voltage input, strong impact resistance
Photovoltaic Inverter: DC-AC conversion, supporting efficient operation of new energy systems
Electric Vehicle Charger: High-voltage, high-power conversion, excellent thermal performance
Auxiliary Power Supply and AC-DC: High-frequency switching scheme, saving system space and cost
SPS04N60C3E8177AKMA1-VB – High-voltage Super Junction, Rock-Solid, Making Your Power Supply Design More Flexible!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
