中文
English
TK6Q65W,S1Q-VB Product details
Back to previous pageProduct introduction：
Struggling with high heat generation and efficiency bottlenecks in high-voltage switching power supplies? Let VBsemi TK6Q65W,S1Q-VB solve your worries! This TO251-packaged N-MOS tube, using SJ_Multi-EPI superjunction process, handles high-voltage scenarios like mains rectification and photovoltaic inverters with ease at 650V. With a 5A current capability and 950mΩ on-resistance, it balances safety margin and loss control. The multi-epitaxial superjunction technology brings superior switching characteristics and avalanche ruggedness, making it a 'reliable choice' for high-voltage power supply engineers.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Voltage Rating: 650V (Confidently used for high-side/low-side in high-voltage systems)
Drive Range: ±30V (Compatible with wide drive voltage, strong gate overvoltage tolerance)
Threshold Voltage: 3.5V (Reliable turn-on at standard logic levels)
On-Resistance: 950mΩ @ 10V (High-voltage super-junction process, controllable losses)
Current Capability: 5A (TO251's heat dissipation advantage, suitable for compact thermal design)
Technology Platform: SJ_Multi-EPI (Super-junction multi-epitaxial, low Qg and good EMI characteristics)
Package: TO251 (Through-hole soldering is robust, suitable for industrial-grade PCB layout)
Drive Range: ±30V (Compatible with wide drive voltage, strong gate overvoltage tolerance)
Threshold Voltage: 3.5V (Reliable turn-on at standard logic levels)
On-Resistance: 950mΩ @ 10V (High-voltage super-junction process, controllable losses)
Current Capability: 5A (TO251's heat dissipation advantage, suitable for compact thermal design)
Technology Platform: SJ_Multi-EPI (Super-junction multi-epitaxial, low Qg and good EMI characteristics)
Package: TO251 (Through-hole soldering is robust, suitable for industrial-grade PCB layout)
Domain and module applications：
– Five Major High-Voltage Scenarios, One Reliable Solution
Switched-Mode Power Supplies: Main switch for flyback/forward converters, stable output from high-voltage input, achieving both efficiency and reliability
LED Lighting Drivers: Constant current/constant voltage PFC circuits, sufficient voltage margin, strong surge withstand capability
Industrial Auxiliary Power Supplies: Auxiliary power for photovoltaic inverters, servo drives, wide voltage adaptation, rock-solid stability
Charging Stations/On-Board Chargers: High-voltage DC-DC conversion, low switching losses, aiding system heat dissipation simplification
AC-DC Adapters: PFC stage for high-power adapters, leveraging superjunction technology for friendlier EMI performance TK6Q65W,S1Q-VB – High-Voltage Superjunction, Steady and Reliable, Making Your Power Supply Design More Effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
