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2SJ646-TL-E-VB Product details

Product introduction:

2SJ646-TL-E-VB is a single P-MOS optimized for low-voltage power switching scenarios. Trench technology balances low switching losses and high reliability, while the TO251 package achieves a good balance between heat dissipation capability and installation convenience. The combination of 30V withstand voltage, 20A current-carrying capacity, and 56mΩ on-resistance makes it an ideal choice for replacing traditional DPAK or SOP-8 package devices, especially suitable for power control applications with higher requirements for heat dissipation and current margin.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -30V -1.7V -20A 72(mΩ) 56(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -30V -1.7V -20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -30V -1.7V -20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
VDS=-30V: Suitable for negative power rails in 5V/12V/24V systems, providing ample margin for voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with wide-range gate drive, can be directly connected to MCU/PMIC or dedicated driver ICs, simplifying circuit design.
Vth=-1.7V (Typical): Ensures full conduction even with low drive voltage, particularly suitable for battery voltage decay scenarios.
RDS(on)=56mΩ @ VGS=10V; 72mΩ @ VGS=4.5V: Low on-resistance effectively reduces conduction losses, significantly improves temperature rise at full load, and can reduce heatsink area or copper foil requirements.
ID=-20A: Ample continuous current margin to handle peak current demands such as motor startup and load transients.
Package TO251: Through-hole mounting balances heat dissipation and mechanical strength, suitable for power board-level applications while saving PCB area.

Domain and module applications:


Power Management Modules: Used for load switches, reverse polarity protection, and negative voltage circuits. Low internal resistance improves system efficiency and reduces self-heating.
Battery Protection Systems: Fast shutdown characteristics ensure reliable protection during overcurrent/short circuit. Low on-resistance reduces temperature rise on the protection board.
Low Voltage Motor Drives: P-MOS high-side drive simplifies the circuit. Low PWM switching losses lead to smoother motor operation and reduced controller temperature rise.
Consumer Electronics Power Interfaces: Logic level compatible drive, suitable for power control in high-volume products like smart home devices and power tools.
LED Lighting Drives: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification or reverse polarity protection, significantly improving efficiency under heavy load, facilitating module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range adapt to 12V/24V vehicle buses, high reliability, meeting stringent environmental requirements. Selection Summary: The 2SJ646-TL-E-VB achieves a balance between current capability, on-resistance, and package heat dissipation. It is a cost-effective general-purpose choice for 30V low-voltage P-channel switching applications, especially suitable for projects with strict requirements on reliability, temperature rise, and overcurrent margin.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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