中文
English
2SK1949L-E-VB Product details
Back to previous pageProduct introduction：
Are you designing a high-power-density industrial control board but struggling with the 35A high current and heat dissipation issues? Ordinary MOSFETs either have high conduction losses or bulky packages. VBsemi 2SK1949L-E-VB is designed for this—it integrates 60V withstand voltage, 35A current-carrying capacity, and an on-resistance of only 32mΩ into a TO251 through-hole package, allowing motor drives, power conversions, and other high-current applications to no longer compromise.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.8V | 35A | 40(mΩ) | 32(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- Voltage Rating: 60V, covering 48V systems and below, with ample safety margin
- Gate Drive Range: ±20V, compatible with wide-range logic level drive
- Threshold Voltage: 2.8V, suitable for medium-to-high voltage gate drive circuits
- On-Resistance: 32mΩ (at 10V drive) / 40mΩ (at 4.5V drive), low loss and minimal heat generation
- Maximum Current: 35A, TO251 package can handle high current
- Trench Technology: Excellent switching performance, high reliability
- Gate Drive Range: ±20V, compatible with wide-range logic level drive
- Threshold Voltage: 2.8V, suitable for medium-to-high voltage gate drive circuits
- On-Resistance: 32mΩ (at 10V drive) / 40mΩ (at 4.5V drive), low loss and minimal heat generation
- Maximum Current: 35A, TO251 package can handle high current
- Trench Technology: Excellent switching performance, high reliability
Domain and module applications：
- Motor Drive Module – Acts as a power switch, effectively reducing conduction losses, improving drive efficiency and range.
- DC-DC Converter / Boost Circuit – Replaces high-loss Schottky diodes in synchronous rectification topologies, significantly improving conversion efficiency.
- Lithium Battery Protection Circuit – Quickly shuts off the circuit when overcurrent or short circuit is detected, safeguarding the battery cells.
- Power Tools / Electric Bicycles – Withstands high current surges, provides stable output, is vibration-resistant, and suitable for harsh working environments.
- Industrial Power Supplies and Inverters – Used in auxiliary power supplies, power factor correction, etc., ensuring long-term reliable system operation.
- Automotive Electronic Systems – Tolerates 12V/24V vehicle voltage fluctuations, providing a robust and reliable power path for loads. **One-sentence summary: The 2SK1949L-E-VB is not an ordinary MOS tube; it is the "powerful heart" and "energy consumption nemesis" for your high-current, medium-voltage applications.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
