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PSMN011-80YS,115-VB Product details
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VBsemi PSMN011-80YS,115-VB is a Single N-channel field-effect transistor from the VBsemi brand product series. This product is manufactured using advanced Trench technology, featuring a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, suitable for medium-voltage power control and efficient power conversion applications. Its package form is LFPAK56, combining excellent thermal performance with a compact footprint, suitable for high-power-density design requirements. The device features extremely low on-resistance and high current-carrying capability, effectively reducing system losses and improving overall efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 80V | 1.4V | 90A | 7.2(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Drain-Source Voltage (VDS): 80V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 7.2mΩ
- On-Resistance (VGS=10V): 6mΩ
- Maximum Drain Current (ID): 90A
- Package: LFPAK56
- Configuration: Single N
- Technology: Trench
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 7.2mΩ
- On-Resistance (VGS=10V): 6mΩ
- Maximum Drain Current (ID): 90A
- Package: LFPAK56
- Configuration: Single N
- Technology: Trench
Domain and module applications：
1. Switching Power Supplies (SMPS) and Synchronous Rectification: PSMN011-80YS,115-VB is suitable for synchronous rectification circuits in medium-voltage switching power supplies. With its low on-resistance and fast switching characteristics, it can significantly improve power conversion efficiency and reduce rectification losses.
2. DC-DC Converters: In DC-DC converter modules for communication equipment, servers, and industrial power supplies, this device can be used as the main switch or synchronous rectifier, supporting high-frequency switching operation, which is conducive to miniaturized, high-efficiency power supply design.
3. Motor Drive Control: Suitable for various medium-voltage motor drive modules, such as industrial fans, power tools, water pumps, and small servo motor controllers. It can be used for motor start/stop, speed regulation, and phase control, providing stable high-current output capability.
4. Automotive Electronic Systems: In automotive power management, body control modules, and auxiliary power systems, this MOSFET can serve as a high-side/low-side switch for load switching and power distribution, meeting automotive-grade reliability requirements.
5. Battery Protection and Management: In power battery packs, energy storage systems, and UPS (Uninterruptible Power Supplies), it is suitable for switch control in charge/discharge circuits, ensuring low loss in the high-current path and system safety.
6. Power Tools and Garden Machinery: This model can be applied in brushless motor controllers for lithium-electric impact wrenches, drills, lawn mowers, etc., withstanding high surge currents and ensuring thermal stability under prolonged heavy-load operation.
7. Communication and Server Power Supplies: In 48V bus power architectures, it is used in OR-ing, load switch, and hot-swap circuits, enabling low-heat, high-efficiency power distribution and improving overall system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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