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SQJA92EP-T1_GE3-VB Product details

Product introduction:

SQJA92EP-T1_GE3-VB is a Single N-MOS optimized for medium and low voltage high-power switching scenarios. Trench technology balances low conduction loss with fast switching capability, and the LFPAK56 package achieves an excellent balance between thermal performance and board space. With an 80V withstand voltage, 90A current carrying capacity, and 6mΩ on-resistance, it is an ideal high cost-performance option to replace traditional DPAK or D2PAK packaged devices in server power supplies, industrial control, and automotive systems, especially suitable for applications requiring high current, high density, and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 80V 1.4V 90A 7.2(mΩ) 6(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 80V 1.4V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 80V 1.4V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=80V: Suitable for 24V/36V/48V systems, provides ample spike voltage margin, significantly reduces avalanche breakdown risk, ideal for inductive load switching scenarios.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/PMIC or driver ICs, simplifying gate drive circuit design.
Vth=1.4V (typical): Enters full conduction region with low-voltage drive, maintains stable conduction under battery voltage fluctuations or low drive voltage conditions.
RDS(on)=6mΩ @ VGS=10V (7.2mΩ @ VGS=4.5V): Ultra-low on-resistance, significantly reduces temperature rise at full load, can reduce heatsink or copper area, improving system power density.
ID=90A: Ample continuous current margin, can cover startup and peak surge requirements of high-current loads such as motors and power supplies.
Package LFPAK56: Low parasitic inductance and thermal resistance, supports high-frequency switching, saves PCB area, and offers excellent board-level reliability.

Domain and module applications:


High-Power DC-DC Converters: Replaces Schottky diodes in synchronous rectification applications, significantly improving heavy-load efficiency, reducing module temperature rise, and facilitating power module miniaturization.
Motor Drives and Control: Low PWM switching losses, can drive motors below 48V and power tools, significantly reducing controller temperature rise for smoother operation.
Battery Protection and Management: Fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, low internal resistance reduces self-heating of the protection board, suitable for high-rate lithium battery systems.
Automotive Power and Auxiliary Systems: 80V voltage tolerance margin covers 12V/24V/48V automotive buses, combined with a wide temperature range, suitable for automotive DC-DC, lighting, and power distribution units.
Server and Communication Power Supplies: High efficiency and high current capability meet the needs of rectification and power stages, LFPAK56 package aids high-density board design.
Industrial Control and Automation: Low conduction loss and high current carrying capacity suit PLCs, servo drives, and industrial power supplies, improving long-term operational reliability.
Power Tools and Garden Machinery: High current density and voltage tolerance margin support high-power output, Trench process brings low heat generation, extending tool continuous operation time. Selection Summary: SQJA92EP-T1_GE3-VB achieves a balance between high current capability, conduction loss, voltage tolerance margin, and package thermal performance, making it a high-performance general-purpose choice for 80V medium/low voltage high-power switching applications, particularly suitable for system designs with strict requirements on efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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