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SIJ4108DP-T1-GE3-VB Product details
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Are you designing a high power density industrial power module but facing challenges with limited heat dissipation space and insufficient high current handling capability? Ordinary MOSFETs either lack sufficient voltage withstand or have excessive conduction losses. The VBsemi SIJ4108DP-T1-GE3-VB provides the ideal answer—it integrates a 60V withstand voltage, 64A continuous drain current, and an on-resistance of only 6.2mΩ into the robust LFPAK56 package, allowing high-power switching applications to no longer compromise on heat and size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Voltage rating 60V, covering 48V systems and most industrial bus applications, with ample safety margin
- Gate drive range ±20V, compatible with 4.5V~10V logic drives, adaptable to various controllers
- Threshold voltage 1~3V, reliable turn-on even with low-voltage drive
- On-resistance 6.2mΩ (at 10V drive), 7.8mΩ (at 4.5V drive), extremely low conduction loss
- Maximum current 64A, LFPAK56 package achieves efficient heat dissipation, small size handles large currents
- Trench technology, optimized switching performance and conduction characteristics
- Gate drive range ±20V, compatible with 4.5V~10V logic drives, adaptable to various controllers
- Threshold voltage 1~3V, reliable turn-on even with low-voltage drive
- On-resistance 6.2mΩ (at 10V drive), 7.8mΩ (at 4.5V drive), extremely low conduction loss
- Maximum current 64A, LFPAK56 package achieves efficient heat dissipation, small size handles large currents
- Trench technology, optimized switching performance and conduction characteristics
Domain and module applications：
- Motor Drive Module – Acts as a power switch in H-bridge or three-phase full-bridge topologies, supporting high-current drive, reducing temperature rise, and enhancing system reliability.
- Server Power Supplies / DC-DC Modules – Replaces low-efficiency devices in synchronous rectification and power conversion stages, significantly improving overall conversion efficiency.
- Power Tools and Lithium Battery Protection Boards – Withstands 60V voltage surges, quickly cuts off overcurrent paths, protecting the battery and equipment safety.
- Automotive Electronic Auxiliary Power – Handles 12V/24V/48V system fluctuations, providing a stable, low-loss power path for loads.
- Industrial Control and PLC Output Stages – Highly reliable switching action, adapting to harsh industrial environments, extending equipment service life.
- Uninterruptible Power Supplies (UPS) / Inverters – Used as power switches or bypass switches, handling high currents while maintaining extremely low on-state voltage drop. One-sentence summary: The SIJ4108DP-T1-GE3-VB is not an ordinary MOSFET; it is the 'efficiency cornerstone' and 'heat dissipation tool' for your 60V high-current switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
