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SQJA62EP-T1_GE3-VB Product details
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Still troubled by low efficiency and severe device heating in high-current power conversion? The VBsemi SQJA62EP-T1_GE3-VB is here to help! This N-MOSFET in LFPAK56 package has a rated current of up to 64A and an ultra-low on-resistance of 6.2mΩ, delivering exceptional loss performance. The Trench process provides fast switching and low gate charge characteristics, while the 60V withstand voltage covers various industrial and automotive power scenarios, making it an "efficiency powerhouse" for high-power power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage: 60V (Adequate margin, safe and reliable)
Gate-Source Voltage: ±20V (Compatible with multiple logic level drives)
Threshold Voltage: 1~3V (Flexibly adaptable to low-voltage control signals)
Ultra-Low On-Resistance: 6.2mΩ @ 10V, 7.8mΩ @ 4.5V (Extremely low conduction loss)
High Current Capability: 64A (Handles high-power applications with ease)
Package: LFPAK56 (Low thermal resistance, suitable for high-density power design)
Technology: Trench (Fast switching, low loss, high reliability)
Gate-Source Voltage: ±20V (Compatible with multiple logic level drives)
Threshold Voltage: 1~3V (Flexibly adaptable to low-voltage control signals)
Ultra-Low On-Resistance: 6.2mΩ @ 10V, 7.8mΩ @ 4.5V (Extremely low conduction loss)
High Current Capability: 64A (Handles high-power applications with ease)
Package: LFPAK56 (Low thermal resistance, suitable for high-density power design)
Technology: Trench (Fast switching, low loss, high reliability)
Domain and module applications：
– Six Popular Scenarios, One MOSFET Handles Them All
DC-DC Conversion: Synchronous rectification and buck circuits, significantly improved efficiency
Motor Drives: Power tools, robot joints, fast and smooth start/stop
Battery Protection and Management: High-current charge/discharge loops, fault current interruption in seconds
Automotive Power Systems: Wide temperature range, vibration resistance, providing solid support for vehicle infotainment and auxiliary power
Server/Communication Power Supplies: High power density design, reducing system temperature rise
Industrial Power Modules: High reliability, low loss, supporting long-term stable operation of equipment
SQJA62EP-T1_GE3-VB – High current, low loss, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
