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SQJ850EP-T1_BE3-VB Product details

Product introduction:

SQJ850EP is a compact, high-current N-channel MOSFET in LFPAK56 package, with 60V withstand voltage and 64A current carrying capacity. With Trench process, the internal resistance is as low as 6.2mΩ, resulting in low heat generation and high efficiency. Gate drive is flexible with a wide range of ±20V, suitable for various medium and low voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 60V 1~3V 64A 7.8(mΩ) 6.2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 60V 1~3V 64A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 60V 1~3V 64A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
Drain-Source Voltage: 60V
Gate-Source Voltage: ±20V
Threshold Voltage: 1~3V
On-Resistance (10V Drive): 6.2 mΩ
On-Resistance (4.5V Drive): 7.8 mΩ
Maximum Current: 64A
Package: LFPAK56

Domain and module applications:


DC-DC Converters → Synchronous Rectification, Better Efficiency
Motor Drive and Control → High Current Output, Fast Response
Battery Protection Circuits → Safe Cutoff, Extended Battery Life
Power Adapters → Low Voltage Drop, High Reliability Power Supply
Automotive Electronic Systems → Vibration Resistance, Good Temperature Tolerance, Stable Operation
Power Tools → High Power Density, Continuous Strong Output
Server Power Supplies → Low Loss, Improved Overall Machine Efficiency
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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