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SQJ464EP-T1_BE3-VB Product details
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Still troubled by high heat generation and insufficient current capacity in high-current power conversion? Let VBsemi SQJ464EP solve your problems! This N-MOSFET in LFPAK56 package adopts advanced Trench process, with 60V withstand voltage and 64A ultra-high current capability, on-resistance as low as 6.2mΩ (@10V), maintaining extremely low temperature rise even under high-current conditions. Its excellent switching characteristics and low loss performance make it the "efficiency champion" for high-voltage and high-current scenarios such as motor drives, power management, and battery protection.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 60V (Adequate margin, safe and reliable)
Gate-Source Voltage (VGS): ±20V (Compatible with various gate drive voltages)
Threshold Voltage (Vth): 1~3V (Suitable for low-voltage logic control)
Ultra-Low On-Resistance: 6.2mΩ @ 10V (Minimal conduction loss)
Low Gate Voltage On-Resistance: 7.8mΩ @ 4.5V (Strong performance even at low drive voltage)
High Current Capability: 64A (Large package releases high power)
Package: LFPAK56 (Low thermal resistance, suitable for high power density design)
Technology: Trench (Fast switching, low loss, stable performance)
Gate-Source Voltage (VGS): ±20V (Compatible with various gate drive voltages)
Threshold Voltage (Vth): 1~3V (Suitable for low-voltage logic control)
Ultra-Low On-Resistance: 6.2mΩ @ 10V (Minimal conduction loss)
Low Gate Voltage On-Resistance: 7.8mΩ @ 4.5V (Strong performance even at low drive voltage)
High Current Capability: 64A (Large package releases high power)
Package: LFPAK56 (Low thermal resistance, suitable for high power density design)
Technology: Trench (Fast switching, low loss, stable performance)
Domain and module applications：
Motor Drive: High-current loads like power tools, fans, and water pumps, smooth speed control without fear of overcurrent
Power Conversion: DC-DC synchronous rectification, greatly improving conversion efficiency and power density
Battery Protection: Fast fault current cutoff, providing reliable protection for energy storage systems and lithium battery packs
Automotive Electronics: Car lights, windows, seat controls, impact-resistant, wide temperature range, stable and durable
Industrial Control: PLC output drive, relay replacement, low conduction loss reduces system temperature rise
Server Power Supply: High-current path design, aiding module efficient heat dissipation and long-term reliable operation SQJ464EP – High Current, Low Impedance, Making Your 60V Power Design More Confident!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
