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SIJ462DP-T1-GE3-VB Product details
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SIJ462DP-T1-GE3-VB is a Single N-MOS optimized for medium- and low-voltage power switching scenarios. Using Trench technology, it balances low conduction loss and high switching speed, while the LFPAK56 package achieves a good trade-off between heat dissipation and footprint. The combination of 60V withstand voltage, 64A current capability, and 6.2mΩ on-resistance makes it an ideal high-density alternative to traditional DPAK or D2PAK packages, particularly suitable for power systems requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=60V: Suitable for 12V/24V/48V systems, providing voltage spike margin, enhancing system avalanche breakdown resistance.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to drivers or controllers, simplifying gate drive circuit design.
Vth=1~3V: Wide turn-on threshold range, supports low-voltage drive scenarios while having good false turn-on immunity.
RDS(on)=6.2mΩ @ VGS=10V: Ultra-low on-resistance, minimal conduction loss at full load, significantly reducing temperature rise and required heat sink copper area.
ID=64A: Strong continuous current capability, covering high-power load and high surge current requirements with ample margin.
Package LFPAK56: Small size, low parasitic inductance, supports high-frequency switching, and has excellent power dissipation capability, suitable for compact high-power designs.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to drivers or controllers, simplifying gate drive circuit design.
Vth=1~3V: Wide turn-on threshold range, supports low-voltage drive scenarios while having good false turn-on immunity.
RDS(on)=6.2mΩ @ VGS=10V: Ultra-low on-resistance, minimal conduction loss at full load, significantly reducing temperature rise and required heat sink copper area.
ID=64A: Strong continuous current capability, covering high-power load and high surge current requirements with ample margin.
Package LFPAK56: Small size, low parasitic inductance, supports high-frequency switching, and has excellent power dissipation capability, suitable for compact high-power designs.
Domain and module applications：
DC-DC Converters: Replacing traditional Schottky diodes in synchronous rectification and low-side switches, significantly improving heavy-load efficiency, beneficial for module miniaturization.
Motor Drive Modules: 64A high current carrying capacity combined with low on-resistance reduces power stage heating, improving driver reliability.
Lithium Battery Protection Boards: 60V voltage rating covers multi-cell battery pack applications, low internal resistance reduces protection board self-consumption, supports high-rate charge/discharge.
Automotive Power Systems: Voltage margin and wide safe operating area suitable for 12V/24V/48V automotive buses, applicable to body electronics and auxiliary power supplies.
Server Power Supplies and Communication Power Supplies: High efficiency and low loss characteristics meet rectification needs in high-voltage to low-voltage topologies, reducing heat sink costs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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