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BUK7Y35-55B,115-VB Product details
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Still troubled by heat and loss in high-current power conversion? Let VBsemi BUK7Y35-55B,115-VB solve your worries! This LFPAK56-packaged N-MOS transistor supports a massive 64A current with a compact footprint, featuring an ultra-low on-resistance of 6.2mΩ, delivering loss performance far superior to similar devices. The Trench process gives it excellent switching characteristics and low gate charge, with a 60V withstand voltage easily covering automotive-grade and industrial applications, making it the "efficiency cornerstone" for high-power-density designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 60V (Ample margin for handling transient spikes more comfortably)
Gate-Source Voltage (VGS): ±20V (Compatible with 4.5V/10V logic and driver ICs)
Threshold Voltage (Vth): 1~3V (Flexibly adapts to various gate drive schemes)
Ultra-Low On-Resistance: 6.2mΩ @ 10V, 7.8mΩ @ 4.5V (Extremely low conduction losses, lower temperature rise)
High Current Capability: 64A (LFPAK56 package enables high current in a small form factor)
Package: LFPAK56 (Low thermal resistance, suitable for high-density power layouts)
Technology: Trench (Fast switching speed, low switching losses)
Gate-Source Voltage (VGS): ±20V (Compatible with 4.5V/10V logic and driver ICs)
Threshold Voltage (Vth): 1~3V (Flexibly adapts to various gate drive schemes)
Ultra-Low On-Resistance: 6.2mΩ @ 10V, 7.8mΩ @ 4.5V (Extremely low conduction losses, lower temperature rise)
High Current Capability: 64A (LFPAK56 package enables high current in a small form factor)
Package: LFPAK56 (Low thermal resistance, suitable for high-density power layouts)
Technology: Trench (Fast switching speed, low switching losses)
Domain and module applications：
DC-DC Conversion: Synchronous rectification and buck topologies, significantly improving efficiency
Battery Protection: Fast on/off switching in high-current loops, safeguarding battery safety
Motor Drive: Power tools, drone ESCs, delivering powerful and smooth power output
Automotive Power Supplies: Wide temperature range, anti-vibration design, meeting stringent automotive electronics requirements
Industrial Power Supplies: Server and telecom equipment power supply, stable and efficient with low heat generation
Power Modules: PFC, inverters, and other front-end circuits, facilitating system miniaturization BUK7Y35-55B,115-VB – Low impedance, high current, high reliability, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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