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SIJ186DP-T1-GE3-VB Product details

Product introduction:

SIJ186DP-T1-GE3-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. The Trench process balances extremely low conduction loss with high switching reliability, and the LFPAK56 package achieves an excellent balance between heat dissipation and footprint. With a 60V withstand voltage, 100A current capability, and 2.9mΩ on-resistance, it is an ideal cost-effective alternative to traditional DPAK or D2PAK packaged devices, especially suitable for applications requiring high power density and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 60V 2.4V 100A 3.48(mΩ) 2.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=60V: Suitable for 12V/24V/48V systems, providing ample voltage spike margin to effectively reduce avalanche breakdown risk.
VGS=±20V: Compatible with standard logic levels and gate drivers, can be directly connected to MCU/PMIC or dedicated drivers, simplifying peripheral design.
Vth=2.4V (Typical): Moderate threshold voltage offers strong noise immunity while ensuring reliable turn-on under low-voltage drive.
RDS(on)=2.9mΩ @ VGS=10V: Ultra-low on-resistance minimizes full-load conduction losses, significantly reducing system temperature rise, and can reduce heatsink or copper area requirements.
RDS(on)=3.48mΩ @ VGS=4.5V: Maintains low resistance even under low-voltage drive, supporting direct drive from 5V logic levels and reducing driver circuit cost.
ID=100A: Ample continuous current margin to handle high-current surge conditions like motor startup and hot-swap power supplies.
Package LFPAK56: Low parasitic inductance and thermal resistance, supports high-frequency switching while saving PCB area and increasing power density.

Domain and module applications:


High-Power DC-DC Converters: Replaces Schottky diodes in synchronous rectification applications, significantly improving heavy-load efficiency, suitable for telecom power and server power modules.
Motor Drive and Control: 100A high current capability covers low-voltage drive scenarios like power tools and electric bicycles; low PWM switching losses significantly reduce controller temperature rise.
Battery Protection and BMS: Ultra-low on-resistance reduces protection board self-heating; fast response capability ensures reliable shutdown during overcurrent/short circuit, improving system safety.
Automotive Power Systems: 60V voltage rating adapts to 12V/24V vehicle buses; wide safe operating area meets harsh conditions like start-stop and load transients.
Lithium Battery Charging and Discharge Management: Low loss in high-current paths improves charging efficiency and discharge runtime, suitable for energy storage devices and portable high-power equipment.
Industrial Power Supplies and UPS: High reliability and low on-resistance contribute to high-efficiency power conversion, simplifying thermal design and extending system life.
Power Tools and Garden Machinery: The LFPAK56 package has strong vibration resistance, combined with high current capability, suitable for high-load, frequent start-stop power tool applications. Selection Summary: The SIJ186DP-T1-GE3-VB achieves a high degree of unity among extremely low on-resistance, high current carrying capacity, and compact packaging in low-voltage high-current switching applications. It is a cost-effective choice balancing performance and cost in the 60V power stage, especially suitable for projects with strict requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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