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PSMN4R1-60YLX-VB Product details

Product introduction:

PSMN4R1-60YLX-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench process achieves an excellent balance between ultra-low on-resistance and fast switching capability, while the LFPAK56 package offers superior heat dissipation and a compact footprint. With a 60V withstand voltage, 100A continuous current capability, and 2.9mΩ on-resistance, it is an ideal core device for high-current applications such as server power supplies, power tools, and automotive power conversion, especially suited for system designs with strict efficiency and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 60V 2.4V 100A 3.48(mΩ) 2.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=60V: Suitable for 12V/24V/48V power systems, reserving ample voltage margin for switching spikes, significantly enhancing avalanche capability.
VGS=±20V: Compatible with 5V~12V logic level drive, can be directly controlled by gate driver IC or MCU, simplifying peripheral circuitry.
Vth=2.4V (typical): Moderate threshold voltage, balancing noise immunity and drive compatibility, ensuring stable turn-on across multiple voltage platforms.
RDS(on)=2.9mΩ @ VGS=10V: Extremely low on-resistance, minimal full-load conduction loss, effectively reducing device temperature rise, allowing for smaller heatsink size.
ID=100A: Ample continuous current capability, can handle high current surges, suitable for harsh conditions like motor startup and short-circuit transients.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area, suitable for high power density design.

Domain and module applications:


Server and Telecom Power Supplies: Replaces multiple parallel MOSFETs in synchronous rectification and OR-ing circuits, reducing losses and improving conversion efficiency.
Power Tools and Garden Machinery: High current drive capability combined with low on-resistance ensures stable continuous output under high load, extending battery life.
Low-Voltage High-Power DC-DC Converters: Extremely low RDS(on) significantly improves heavy-load efficiency, aiding module miniaturization and high power density design.
Battery Protection and BMS Systems: Milliohm-level on-resistance reduces protection board heating; fast switching response ensures reliable shutdown during overcurrent/short circuit.
Automotive 12V/24V Auxiliary Systems: 60V voltage rating covers load dump transients, adapting to wide temperature operating ranges, meeting automotive reliability requirements.
Motor Drive and Drone ESCs: Low high-frequency PWM switching losses, high current margin supports high burst output, improving dynamic response.
Industrial Automation and Robotics: Robust packaging and thermal performance adapt to long-term full-load operation, reducing system failure rates. Selection Summary: The PSMN4R1-60YLX-VB, with its 2.9mΩ ultra-low on-resistance, 100A high current capability, and advanced LFPAK56 package, provides a high-performance, high-reliability solution for high-power low-voltage switching applications, especially suitable for design projects with extreme demands on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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