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PSMN4R0-60YS,115-VB Product details
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The VBsemi PSMN4R0-60YS,115-VB is a Single N-channel power field-effect transistor using Trench technology, designed for high-current, medium-to-low voltage power conversion and high-density power management scenarios. Its LFPAK56 package offers excellent heat dissipation and low parasitic parameters, suitable for high-power PCB layouts. The device provides extremely low on-resistance and high current-carrying capability within a 60V drain-source voltage range, supporting 4.5V logic-level drive for easy system integration and efficient operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2.4V | 100A | 3.48(mΩ) | 2.9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): Typical 2.4V
On-Resistance (VGS=4.5V): 3.48 mΩ (Typical)
On-Resistance (VGS=10V): 2.9 mΩ (Typical)
Maximum Drain Current (ID): 100A
Package Type: LFPAK56
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): Typical 2.4V
On-Resistance (VGS=4.5V): 3.48 mΩ (Typical)
On-Resistance (VGS=10V): 2.9 mΩ (Typical)
Maximum Drain Current (ID): 100A
Package Type: LFPAK56
Technology: Trench
Domain and module applications：
1. High-current DC-DC converters: Used in synchronous rectification BUCK/BOOST circuits, utilizing 2.9mΩ ultra-low on-resistance to significantly reduce conduction losses and improve power conversion efficiency.
2. Motor drive control: Suitable for brushless DC/brushed motor drivers in power tools, robots, drones, etc., supporting high-current PWM speed control, ensuring high torque output.
3. Power adapters and fast charging: Acts as a 60V withstand voltage main switching transistor, suitable for PD/QC fast charging solutions, maintaining low temperature rise and stable switching performance during high power transmission.
4. Battery charge/discharge management: Used as the main switch in charge/discharge circuits for energy storage systems, electric vehicle battery protection boards, enabling fast overcurrent and overvoltage shutdown to ensure battery safety.
5. Automotive electronic systems: Provides high-current switching for automotive inverters and DC-DC power modules in 12V/24V vehicle networks, adapting to wide temperature and vibration environments.
6. Server and telecom power supplies: Used in high-efficiency rectification stages or Power Factor Correction (PFC) circuits, meeting high power density and high reliability requirements.
7. Industrial control and electric forklifts: Applied to high-power load switches in industrial frequency converters, hydraulic pump controls, etc. The 100A high current capability simplifies parallel design and improves system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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