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NVMYS3D3N06CLTWG-VB Product details

Product introduction:

The NVMYS3D3N06CLTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios, using advanced Trench technology to balance extremely low conduction losses with high switching reliability. The LFPAK56 package achieves an excellent balance between heat dissipation and footprint. The combination of 60V voltage tolerance, 100A current-carrying capability, and 2.9mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or TO-252 packages in server power supplies, power tools, and automotive electrical systems, especially suitable for high-power-density, high-thermal-load demanding applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 60V 2.4V 100A 3.48(mΩ) 2.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=60V: Suitable for 12V/24V/48V systems, providing ample peak voltage margin, reducing avalanche breakdown risk, and enhancing system robustness.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to driver IC or MCU, simplifying gate drive circuit design.
Vth=2.4V (typical): Moderate threshold voltage, ensuring sufficient low-voltage drive conduction while maintaining good noise immunity.
RDS(on)=3.48mΩ @ VGS=4.5V / 2.9mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing full-load temperature rise, allowing for smaller heatsinks or less copper usage.
ID=100A: Strong continuous current capability, capable of handling peak current surges of high-power loads, suitable for high current density applications.
Package LFPAK56: Low thermal resistance, low parasitic inductance, supports high-frequency switching, saves PCB area and optimizes power loop layout.

Domain and module applications:


DC-DC Converters and Synchronous Rectification: Milliohm-level on-resistance significantly reduces rectification losses, notably improving heavy-load efficiency, suitable for high-efficiency power modules.
Power Tools and Industrial Motor Drives: 100A high current capability combined with low switching losses ensures smooth operation of high-power motors, with a noticeable reduction in controller temperature rise.
Automotive Power Systems: 60V withstand voltage margin covers 12V/24V vehicle bus transient overvoltages, wide operating temperature range adapts to harsh engine compartment environments.
Lithium Battery Protection Boards and BMS: Low internal resistance reduces self-heating of the protection board, fast switching characteristics ensure reliable shutdown during overcurrent/short circuit.
Server and Telecom Power Supplies: LFPAK56 package suitable for high-density board design, low on-resistance improves current handling capability, reducing thermal stress.
UPS and Inverters: Suitable for both high-side and low-side switch applications, high current margin enhances system overload capability.
Power Path Management: In OR-ing and load switch circuits, extremely low voltage drop reduces power consumption, extending battery-powered device runtime. Selection Summary: NVMYS3D3N06CLTWG-VB achieves a high degree of balance between withstand voltage, current carrying capacity, on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 60V low-voltage high-power switching applications, especially suitable for projects with strict requirements on current density, heat dissipation, and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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