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NVMYS4D1N06CLTWG-VB Product details

Product introduction:

The NVMYS4D1N06CLTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. Trench technology balances ultra-low conduction losses with fast switching capability, and the LFPAK56 package achieves an ideal balance between heat dissipation and footprint. The combination of 60V voltage tolerance, 100A current-carrying capability, and 2.9mΩ on-resistance makes it a high-performance preferred device in high-density power modules, automotive systems, and industrial control, especially suitable for applications with strict efficiency and reliability requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 60V 2.4V 100A 3.48(mΩ) 2.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 60V 2.4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=60V: Suitable for 12V/24V/48V systems, providing ample peak voltage margin, enhancing avalanche ruggedness, and reducing failure risk.
VGS=±20V: Compatible with a wide range of logic level drives, can flexibly connect to MCU, PMIC, or dedicated gate drivers, simplifying peripheral design.
Vth=2.4V (typical): Moderate threshold voltage, balancing noise immunity and low-voltage drive feasibility, suitable for multi-scenario gate drive conditions.
RDS(on)=2.9mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load power consumption, significantly reducing temperature rise, allowing for smaller heatsinks or copper area.
RDS(on)=3.48mΩ @ VGS=4.5V: Maintains excellent conduction characteristics even under lower gate drive, supporting direct 5V logic drive.
ID=100A: Ample continuous current capability, covering high-power loads and severe transient surge requirements with sufficient margin.
Package LFPAK56: Low parasitic inductance and thermal resistance, supports high-density mounting, improving system power density and long-term reliability.

Domain and module applications:


High-power DC-DC Converters: Replaces traditional MOSFETs in synchronous rectification applications, significantly improving heavy-load efficiency, facilitating module miniaturization and high power output.
Automotive Power Systems: 60V withstand voltage combined with 100A current capability, suitable for 12V/24V vehicle buses, motor drives, and auxiliary power supplies. Wide temperature range improves reliability in harsh environments.
Battery Protection and BMS: Microsecond switching response ensures fast shutdown during overcurrent/short circuit. Ultra-low internal resistance reduces self-heating of the protection board, extending battery pack life.
Server and Telecom Power Supplies: Low losses at high switching frequencies, meeting high-efficiency, high-power-density requirements, suitable for VRM, POL, and other power supply modules.
Industrial Motor Drives: Smooth PWM control, low switching and conduction losses, noticeable reduction in controller temperature rise, improving system stability.
Power Tools and Gardening Machinery: High current drive capability matches high-load startup scenarios. LFPAK56 package has strong vibration resistance, suitable for handheld devices.
Power OR-ing and Load Switches: Low conduction voltage drop reduces system voltage loss. 100A current capability supports high-power redundant power supply architectures. Selection Summary: NVMYS4D1N06CLTWG-VB achieves an excellent balance between withstand voltage, current capability, on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 60V low-voltage high-power switching applications, particularly suitable for power supply and automotive projects with stringent requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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