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SQJA38EP-T1_GE3-VB Product details
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You are designing a high-power-density power module with limited board space, yet it needs to continuously carry tens of amperes of current. Ordinary MOS transistors either have high conduction losses or large package sizes, making heat dissipation and layout challenging. VBsemi SQJA38EP-T1_GE3-VB is designed for this—it integrates 40V withstand voltage, 100A current-carrying capacity, and an ultra-low on-resistance of only 2mΩ into the standard LFPAK56 package, allowing high-current switching designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Voltage rating 40V, covers 12V/24V systems and various industrial power scenarios
- Gate drive range ±20V, compatible with low-voltage logic and wide-range drive
- Threshold voltage 1.4V, excellent low-voltage direct drive capability
- On-resistance 2mΩ (10V drive) / 2.4mΩ (4.5V drive), extremely low loss, smaller temperature rise
- Maximum current 100A, LFPAK56 package can also unleash impressive power
- Trench process technology, excellent switching performance and conduction characteristics
- Gate drive range ±20V, compatible with low-voltage logic and wide-range drive
- Threshold voltage 1.4V, excellent low-voltage direct drive capability
- On-resistance 2mΩ (10V drive) / 2.4mΩ (4.5V drive), extremely low loss, smaller temperature rise
- Maximum current 100A, LFPAK56 package can also unleash impressive power
- Trench process technology, excellent switching performance and conduction characteristics
Domain and module applications：
- High-Power DC-DC Converters / Synchronous Rectification – Used as main switches or rectifiers, significantly reducing conduction losses and improving overall conversion efficiency.
- Motor Drive Control – Scenarios like brushless DC motors, power tools, and drone ESCs, leveraging 100A high-current capability for powerful drive.
- Lithium Battery Protection Boards / BMS – High-reliability switches in charge/discharge circuits, milliohm-level internal resistance reduces heat generation, ensuring safe high-rate charge/discharge.
- Server Power Supplies / Telecom Power Supplies – Withstands high-load surges, providing a stable switching path in compact spaces, aiding high-density power supply design.
- Automotive Electronics / On-Board Load Management – Withstands automotive voltage fluctuations, providing reliable on/off for high-power loads like headlights, heaters, and ECUs.
- E-bike / Balance Scooter Controllers – Continuous high-current output without overheating, extending overall device range and lifespan.
- Fast Charging Piles / Energy Storage Converters – Leverages low-resistance, high-efficiency advantages in high-side auxiliary power supplies or low-side conversion. One-sentence summary: The SQJA38EP-T1_GE3-VB is not an ordinary MOS tube; it is the 'core switch' and 'efficiency engine' for your high-current, low-loss power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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