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SQJ858AEP-T1_GE3-VB Product details
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SQJ858AEP-T1_GE3-VB is a Single N-MOS deeply optimized for low-voltage high-current power switching scenarios. Trench technology balances ultra-low on-resistance with high switching speed, and the LFPAK56 package achieves an excellent balance between thermal performance and footprint. The combination of 40V withstand voltage, 100A current-carrying capacity, and 2mΩ-class on-resistance makes it an ideal choice for high-current applications like server power supplies, power tools, and automotive power modules, especially for systems with strict requirements on power density and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for switching spikes and transient overvoltage, enhancing system reliability.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to MCU/PMIC or dedicated gate drivers, simplifying drive circuit design.
Vth=1.4V (typical): Can be effectively turned on under low-voltage drive, suitable for battery-powered and low-voltage drop operating conditions.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction loss, significantly reducing temperature rise and heatsink requirements.
RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low impedance even under low-voltage drive, suitable for high-efficiency applications with 5V logic direct drive.
ID=100A: Ample continuous current capability, can handle high current transient scenarios such as motor startup and short-circuit surges.
Package LFPAK56: Low parasitic inductance, excellent thermal conduction path, supports high-frequency switching, saves PCB area, and is compatible with standard SMT processes.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to MCU/PMIC or dedicated gate drivers, simplifying drive circuit design.
Vth=1.4V (typical): Can be effectively turned on under low-voltage drive, suitable for battery-powered and low-voltage drop operating conditions.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction loss, significantly reducing temperature rise and heatsink requirements.
RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low impedance even under low-voltage drive, suitable for high-efficiency applications with 5V logic direct drive.
ID=100A: Ample continuous current capability, can handle high current transient scenarios such as motor startup and short-circuit surges.
Package LFPAK56: Low parasitic inductance, excellent thermal conduction path, supports high-frequency switching, saves PCB area, and is compatible with standard SMT processes.
Domain and module applications：
DC-DC Converters and Synchronous Rectification: Ultra-low on-resistance significantly improves heavy-load efficiency, replacing traditional DPAK or D2PAK devices to reduce module size.
Power Tools and Brushless Motor Drives: 100A high-current margin and low thermal resistance ensure stable long-term high-load operation, low PWM switching losses for smoother control.
Automotive Power Modules: 40V voltage rating covers 12V/24V automotive electrical systems, with a wide safe operating area suitable for high-temperature engine bay environments.
Server and Telecom Power Supplies: High efficiency and low heat generation, suitable for compact designs of high power density power modules.
Battery Protection and BMS: Milliohm-level internal resistance reduces self-heating in protection boards, strong high-current switching capability, suitable for high-rate charge/discharge scenarios.
Low-Voltage High-Current Switching Circuits: Can serve as ideal high-power load switches for industrial control, UPS, and smart power distribution systems. Selection Summary: The SQJ858AEP-T1_GE3-VB achieves 2mΩ-level on-resistance and 100A continuous current capability on a 40V voltage platform. The LFPAK56 package balances heat dissipation and space efficiency, making it a high-performance universal choice for low-voltage, high-current switching applications, especially suitable for projects with extreme requirements on conduction loss, thermal performance, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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