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SQJ420EP-T1_GE3-VB Product details

Product introduction:

SQJ420EP-T1_GE3-VB is a Single N-MOS deeply optimized for low-voltage high-power switching scenarios. Trench technology balances extremely low conduction losses with high switching reliability, and the LFPAK56 package achieves an excellent balance between thermal capability and footprint. The combination of 40V withstand voltage, 100A current-carrying capacity, and 2mΩ-class on-resistance makes it an ideal high-performance alternative to traditional DPAK, D2PAK, or SOP-8 package devices, especially for applications requiring high power density and continuous high-current output.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 1.4V 100A 2.4(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 1.4V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 1.4V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N
VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for switching spike voltage, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to the controller driver stage, simplifying gate drive circuit design.
Vth=1.4V (typical): Can enter the fully conductive region under low-voltage drive conditions, suitable for power supply environments with large battery voltage fluctuations.
RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low on-resistance even under lower gate voltage drive, facilitating high efficiency in low-voltage systems.
RDS(on)=2.0mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load temperature rise, effectively reducing heatsink size or PCB copper area.
ID=100A: Extremely strong continuous current carrying capability, meeting the stringent peak current requirements of high-power motors, power modules, and automotive loads.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area, suitable for compact high-power design.

Domain and module applications:


High-Power DC-DC Converters: Serving as synchronous rectifiers or main switches in power stages, the 2mΩ-level on-resistance significantly improves heavy-load efficiency, facilitating module miniaturization and high power density design.
Power Tools and Motor Drives: The 100A high-current margin handles stall and startup surges, with low PWM switching losses that notably reduce controller temperature rise, enhancing system stability.
Automotive Power Supplies and Electronics: 40V voltage rating combined with a wide temperature range adapts to 12V/24V automotive buses, maintaining reliable operation under harsh conditions such as start-stop and load transients.
Server and Telecom Power Supplies: High efficiency and low heat generation meet long-term full-load operation requirements, while the LFPAK56 package facilitates multi-tube paralleling for power level expansion.
Battery Protection and BMS: Low internal resistance greatly reduces self-heating in protection boards, with fast turn-off capability during overcurrent/short circuits enhancing system safety.
Industrial Control and Robotics: High current drive capability paired with low conduction losses suits high-power actuators, servo drives, and power switching circuits.
Backup Power and UPS: Achieves ultra-low voltage drop in battery charge/discharge circuits, reducing system power consumption and improving endurance and conversion efficiency. Selection Summary: The SQJ420EP-T1_GE3-VB, with its 40V voltage rating, 100A high current, 2mΩ-level ultra-low on-resistance, and advanced LFPAK56 package, achieves an excellent balance between performance margin, thermal management, and system cost. It is a high-end universal choice for low-voltage, high-power switching applications, especially suitable for projects with strict requirements on current density, conversion efficiency, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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