中文
English
SQJ154EP-T1_GE3-VB Product details
Back to previous pageProduct introduction：
You are designing a high-power-density DC-DC converter or a battery management system requiring continuous high-current output—PCB area is tight, heat dissipation pressure is immense, and ordinary MOS transistors either have high conduction losses or are too large to fit. VBsemi SQJ154EP-T1_GE3-VB is designed for this: it integrates 40V withstand voltage, 100A current-carrying capacity, and an on-resistance as low as 2mΩ into the standard LFPAK56 power device package, allowing high-current power supply designs to both "handle the load" and "dissipate the heat."
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Withstand Voltage 40V, suitable for 12V/24V and even higher voltage industrial and automotive applications
- Gate Drive Range ±20V, compatible with 4.5V~10V logic levels, offering more flexible drive design
- Threshold Voltage 1.4V, reliable turn-on with low-voltage drive, suitable for wide-range control circuits
- On-Resistance 2.4mΩ (4.5V drive) / 2mΩ (10V drive), extremely low loss, lower temperature rise in high-current scenarios
- Maximum Drain Current 100A, achieving true 'small size, high power' in LFPAK56 package
- Trench process technology, excellent switching characteristics, suitable for high-frequency operation
- Gate Drive Range ±20V, compatible with 4.5V~10V logic levels, offering more flexible drive design
- Threshold Voltage 1.4V, reliable turn-on with low-voltage drive, suitable for wide-range control circuits
- On-Resistance 2.4mΩ (4.5V drive) / 2mΩ (10V drive), extremely low loss, lower temperature rise in high-current scenarios
- Maximum Drain Current 100A, achieving true 'small size, high power' in LFPAK56 package
- Trench process technology, excellent switching characteristics, suitable for high-frequency operation
Domain and module applications：
- High-Power DC-DC Buck/Boost Modules – Used as the main synchronous rectification switch, the ultra-low on-resistance significantly improves conversion efficiency and reduces heatsink requirements.
- Lithium Battery Protection Boards / BMS Battery Management – 100A-level current capability combined with 40V voltage rating precisely handles overcurrent and short circuit protection, safeguarding battery pack safety.
- Power Tools / Garden Machinery – Continuous high-current output without 'weakening', Trench process ensures efficient commutation, extending battery life.
- Automotive Power Supplies / Automotive Electronics – Withstands 40V voltage fluctuations, providing stable, low-loss power switching for loads like headlights, wipers, and seat motors.
- Server Power Supplies / Telecom Base Station Power Supplies – Replaces multiple paralleled small MOSFETs in low-voltage, high-current buses, simplifying PCB layout and improving system reliability.
- Motor Drive Controllers – Used in the power stage of brushed/brushless motors, the 2mΩ on-resistance keeps the driver 'cool' even under full load. One-sentence summary: The SQJ154EP-T1_GE3-VB is not an ordinary MOS tube; it is the 'low-resistance tool' and 'efficiency core' for your high-current, high-density power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
