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SQJ886EP-T1_BE3-VB Product details
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The SQJ886EP-T1_BE3-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench technology balances ultra-low conduction losses with high switching reliability, and the LFPAK56 package achieves an excellent balance between heat dissipation capability and board space occupation. The combination of a 40V withstand voltage, 100A current-carrying capacity, and 2mΩ-level on-resistance makes it an ideal upgrade option to replace traditional DPAK or SOP-8 package devices, especially suitable for high-density, high-current, and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Suitable for 5V/12V/24V systems, provides ample voltage margin for spikes, reducing avalanche breakdown risk, also suitable for higher bus voltage scenarios. VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level shift circuits. Vth=1.4V (typical): Can enter full conduction region even with low-voltage drive, especially suitable for battery voltage decay scenarios. RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise at full load, can significantly reduce heatsink copper area, improving system efficiency. RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low on-resistance even with low gate voltage drive, supports low-voltage logic directly driving high-current loads. ID=100A: Ample continuous current margin, can handle peak demands of high-power motors, power modules, and automotive loads. Package LFPAK56: Low parasitic parameters, excellent thermal resistance characteristics, supports high-frequency switching, saves PCB area and facilitates automated SMD.
Domain and module applications：
High-power DC-DC Converters: Replacing Schottky diodes or conventional MOSFETs in synchronous rectification, significantly improving efficiency under heavy load, facilitating module miniaturization and high-density design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
