中文
English
SQJ868EP-T1_BE3-VB Product details
Back to previous pageProduct introduction：
SQJ868EP-T1_BE3-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching applications. The Trench technology balances ultra-low on-resistance with high switching speed, and the LFPAK56 package achieves an ideal balance between heat dissipation capability and board area. The combination of 40V withstand voltage, 100A current carrying capacity, and 2mΩ-level on-resistance makes it a preferred device for high-density power conversion, motor drive, and battery protection and other high-current applications, especially suitable for system designs with stringent requirements for power density and thermal performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Suitable for 12V/24V/36V systems, provides ample voltage margin for spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level shift circuits.
Vth=1.4V (typical): Can enter full conduction region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=2.4mΩ @ VGS=4.5V / 2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise at full load, can reduce heatsink copper area, improving system efficiency.
ID=100A: Ample continuous current margin, can handle peak demands of high-power loads and high surge current scenarios.
Package LFPAK56: Low parasitic inductance, excellent thermal characteristics, supports high-frequency switching, saves PCB area and enhances board-level reliability.
Domain and module applications：
High-Power DC-DC Converters: Replaces Schottky diodes or conventional MOS in synchronous rectification, significantly improves heavy-load efficiency, beneficial for module miniaturization and high power density design.
BLDC Motor Drives: Low PWM switching loss, extremely low conduction loss, smoother motor operation, noticeably lower controller temperature rise.
Battery Protection Modules: 100A high current carrying capability and microsecond-level fast turn-off characteristics ensure reliable protection during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Automotive Power Systems: 40V voltage margin suitable for 12V/24V automotive buses; wide operating temperature range and low on-resistance suitable for start-stop systems and auxiliary power supplies.
Industrial Power Supplies and Load Switches: High current, low loss characteristics suitable for power path management in server power supplies, telecom equipment hot-swap, and industrial control.
Power Tools and Energy Storage Equipment: High power density package combined with ultra-low on-resistance meets continuous output capability under impact loads, extending tool runtime and reducing case temperature rise. Selection Summary: SQJ868EP-T1_BE3-VB achieves an excellent balance between ultra-high current capability, ultra-low on-resistance, and compact packaging. It is a high-performance general-purpose choice for 40V low-voltage high-power switching applications, particularly suitable for system-level designs with strict requirements on efficiency, power consumption, and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
