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SQJ860EP-T1_BE3-VB Product details
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VBsemi SQJ860EP-T1_BE3-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced Trench technology, featuring extremely low on-resistance and high current carrying capacity, suitable for high-power, high-efficiency power conversion and control applications. The device has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and is packaged in LFPAK56, balancing thermal performance with compact design requirements, making it suitable for modern high-density power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 2.4mΩ
- On-Resistance (VGS=10V): 2.0mΩ
- Max Drain Current (ID): 100A
- Technology: Trench
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.4V
- On-Resistance (VGS=4.5V): 2.4mΩ
- On-Resistance (VGS=10V): 2.0mΩ
- Max Drain Current (ID): 100A
- Technology: Trench
Domain and module applications：
1. High-Efficiency DC-DC Converters: SQJ860EP-T1_BE3-VB is suitable for synchronous buck and boost circuits. With its 2.0mΩ ultra-low on-resistance and 100A high current capability, it significantly improves conversion efficiency and reduces power loss, ideal for server power supplies, telecom equipment power modules, etc.
2. Power Tools and Motor Drives: This device can be used in high-power BLDC motor drivers, power tool controllers, and robot joint motor modules, meeting requirements for high current transient response and low heat generation, ensuring stable and reliable motor control.
3. Automotive Electronic Systems: In automotive power management, body control modules, and auxiliary power systems, this MOSFET handles high-current switching tasks. Its low on-resistance and robust package design are suitable for the high vibration and wide temperature range of automotive-grade environments.
4. Battery Protection and Management Systems: Suitable for energy storage battery packs and power battery management units as a switching device in charge/discharge circuits. It effectively reduces conduction voltage drop, improves system efficiency, and supports high-current overload protection.
5. Server and Data Center Power Supplies: In redundant power supplies, rectifier modules, and point-of-load power supplies, this product can be used for secondary side rectification or switching arrays, meeting high power density and stringent thermal management requirements.
6. Power Adapters and Fast Charging Solutions: This MOSFET is suitable for switching and synchronous rectification applications in high-power USB PD fast chargers and laptop adapters. Low gate drive loss and low on-resistance contribute to miniaturized, high-efficiency designs.
7. Industrial Power Supplies and Inverters: In industrial VFDs, UPS uninterruptible power supplies, and solar inverters, SQJ860EP-T1_BE3-VB can serve as a high-frequency switching tube, increasing system power density and enhancing overcurrent capability and thermal reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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