中文
English
SQJ858AEP-T1_JB3-VB Product details
Back to previous pageProduct introduction：
Still troubled by high conduction losses and heat dissipation pressure in high-current power solutions? Let VBsemi SQJ858AEP-T1_JB3-VB help you! This N-MOSFET in LFPAK56 package features a massive 100A current capability and an on-resistance as low as 2mΩ (@10V), earning it the title of "low-resistance king" in low-voltage, high-power scenarios. Trench technology delivers extremely fast switching speeds and very low switching losses, while the 40V withstand voltage easily handles various low-voltage, high-density power designs, allowing engineers to say goodbye to heat concerns and achieve efficient, compact system layouts with ease.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (ample margin, stable and reliable)
Drive Range: ±20V (compatible with 4.5V/10V/12V drive)
Threshold Voltage: 1.4V (low-voltage logic can also drive effectively)
Ultra-Low On-Resistance: 2.4mΩ @ 4.5V, 2mΩ @ 10V (extremely low conduction losses)
High Current Capability: 100A (strong continuous current capability)
Package: LFPAK56 (high current, low thermal resistance, suitable for high power density SMD)
Technology: Trench (fast switching, low losses, high reliability)
Drive Range: ±20V (compatible with 4.5V/10V/12V drive)
Threshold Voltage: 1.4V (low-voltage logic can also drive effectively)
Ultra-Low On-Resistance: 2.4mΩ @ 4.5V, 2mΩ @ 10V (extremely low conduction losses)
High Current Capability: 100A (strong continuous current capability)
Package: LFPAK56 (high current, low thermal resistance, suitable for high power density SMD)
Technology: Trench (fast switching, low losses, high reliability)
Domain and module applications：
– Six High-Power Scenarios, One Solution
Brushless DC Motor Drive: Power tools, drones, robot motors, fast speed response, low heat generation
Power Supply Synchronous Rectification: Server power supplies, telecom power supplies, significant efficiency improvement, more compact modules
Automotive Power Conversion: Lamp control, DC-DC conversion, battery management systems, impact resistant, wide temperature range
Lithium Battery Protection and Charge/Discharge: High-rate battery packs, energy storage systems, instantaneous fault current interruption, safe and reliable
Electric Toys and Smart Home: High-power motors, heating control, low power consumption, long life
Low Voltage High Current Switching: Power path management, load switches, minimal voltage drop, more energy-efficient system. SQJ858AEP-T1_JB3-VB – Low resistance, high current, rock solid, making your low-voltage high-power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
