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SIJ150DP-T1-GE3-VB Product details
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VBsemi SIJ150DP-T1-GE3-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product features extremely low on-resistance and high current-carrying capacity, suitable for high-power, high-density power conversion and control applications. It is manufactured using advanced Trench technology, with a drain-source voltage (VDS) of 40V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in LFPAK56 (compatible with PowerPAK 5x6), suitable for application environments requiring efficient heat dissipation and compact layout.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.4V
On-Resistance (VGS=4.5V): 2.4 mΩ
On-Resistance (VGS=10V): 2.0 mΩ
Maximum Drain Current (ID): 100A
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.4V
On-Resistance (VGS=4.5V): 2.4 mΩ
On-Resistance (VGS=10V): 2.0 mΩ
Maximum Drain Current (ID): 100A
Domain and module applications：
1. High-Power DC-DC Converters: The SIJ150DP-T1-GE3-VB is suitable for high-power-density DC-DC conversion modules in servers, communication equipment, etc., used as synchronous rectifiers or switching transistors, significantly improving conversion efficiency and reducing losses.
2. Power Tools and Motor Drives: This device can be used in high-power brushless DC motor controllers and power tool drive modules. With its 100A high-current capability and ultra-low on-resistance, it meets the demands of high-load startup and continuous operation.
3. Battery Protection and Management Systems: In energy storage devices and electric vehicle battery management systems, the SIJ150DP-T1-GE3-VB can serve as a high-current switching element for charge/discharge circuit control, ensuring safe and efficient system operation.
4. Automotive Electronics: This product is suitable for on-board power conversion, body control modules, and auxiliary drive circuits. Its 40V voltage tolerance and low on-resistance characteristics adapt to 12V/24V vehicle electrical environments, providing reliable power switching.
5. Power Adapters and Fast Charging Solutions: In high-end power adapters and USB PD fast charging circuits, this MOSFET can be used for primary switching and secondary synchronous rectification, aiding in miniaturized, high-efficiency designs.
6. Server and Data Center Power Supplies: In architectures like 48V bus converters, the low voltage drop and high current characteristics of the SIJ150DP-T1-GE3-VB are suitable for intermediate bus converters and point-of-load power modules, improving overall energy efficiency.
7. Industrial Control and Automation Equipment: This model can be used in industrial inverters, servo drives, and PLC power modules, providing stable switching performance and thermal reliability under harsh operating conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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