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NVMYS8D0N04CTWG-VB Product details
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NVMYS8D0N04CTWG-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. The Trench process combines ultra-low on-resistance with high switching speed, and the LFPAK56 package achieves an excellent balance between heat dissipation and board space. The combination of a 40V withstand voltage, 100A current capacity, and 2mΩ-level on-resistance makes it an ideal choice for high-density power conversion in server power supplies, power tools, and automotive electronics, especially for applications with strict thermal and efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Adapts to 5V/12V/24V/36V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating the need for level-shifting circuits.
Vth=1.4V (typical): Can still enter the fully enhanced region under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can substantially reduce the required copper area for heat dissipation. RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low conduction losses under low-voltage logic drive, improving light-load efficiency.
ID=100A: Ample continuous current margin, can handle transient high-current surges like motor stall and power hot-plug.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, while saving PCB area and enhancing the soldering reliability of the thermal pad.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating the need for level-shifting circuits.
Vth=1.4V (typical): Can still enter the fully enhanced region under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can substantially reduce the required copper area for heat dissipation. RDS(on)=2.4mΩ @ VGS=4.5V: Maintains extremely low conduction losses under low-voltage logic drive, improving light-load efficiency.
ID=100A: Ample continuous current margin, can handle transient high-current surges like motor stall and power hot-plug.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, while saving PCB area and enhancing the soldering reliability of the thermal pad.
Domain and module applications：
Server/Communication Power Supplies: Ultra-low on-resistance significantly reduces synchronous rectification losses, improves power conversion efficiency, meeting high-power-density design requirements.
Power Tools and Garden Machinery: 100A high-current capability confidently handles motor startup and stall conditions, LFPAK56 package enhances heat dissipation, ensuring long-term heavy-load operation.
Low-voltage BLDC Motor Drives: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise.
Battery Protection Modules: Milliohm-level internal resistance reduces self-heating of the protection board, fast shutdown capability ensures microsecond-level response during overcurrent/short circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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